SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 1, 2012, Pages

Gate-controlled P-I-N junction switching device with graphene nanoribbon

(8) Nakaharai, Shu a Iijima, Tomohiko b Ogawa, Shinichi b Miyazaki, Hisao c Li, Songlin c Tsukagoshi, Kazuhito c Sato, Shintaro a Yokoyama, Naoki a

a Collaborative Research Team Green Nanoelectronics Center ^* (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT MODULATION; GRAPHENE NANO-RIBBON; GRAPHENE TRANSISTORS; NANORIBBONS; OPTIMIZED OPERATIONS; P-I-N JUNCTIONS; SWITCHING DEVICES; SWITCHING PROPERTIES; TOP GATE;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84862908176 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.5.015101 Document Type: Article

Times cited : (18)

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