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Volumn 86, Issue 12, 2012, Pages

Charged impurity scattering in top-gated graphene nanostructures

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Indexed keywords


EID: 84867010897     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.86.121409     Document Type: Article
Times cited : (36)

References (18)
  • 10
    • 34047094264 scopus 로고    scopus 로고
    • Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering
    • DOI 10.1103/PhysRevLett.98.136805
    • D. Jena and A. Konar, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.98.136805 98, 136805 (2007). (Pubitemid 46515810)
    • (2007) Physical Review Letters , vol.98 , Issue.13 , pp. 136805
    • Jena, D.1    Konar, A.2
  • 16
    • 0347567369 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.1630169
    • F. Gamiz and M. Fischetti, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1630169 83, 4848 (2003).
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 4848
    • Gamiz, F.1    Fischetti, M.2
  • 18
    • 36849058645 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.76.245405
    • V. M. Galitski, S. Adam, and S. Das Sarma, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.76.245405 76, 245405 (2007).
    • (2007) Phys. Rev. B , vol.76 , pp. 245405
    • Galitski, V.M.1    Adam, S.2    Das Sarma, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.