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Applied Physics A: Materials Science and Processing

Volumn 98, Issue 3, 2010, Pages 565-569

Energy distribution of channel electrons and its impacts on the gate leakage current in graphene field-effect transistors

(1) Mao, Ling Feng a

a SOOCHOW UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ELECTRONS; CONDUCTION BAND OFFSET; ENERGY DISTRIBUTIONS; ENERGY-MOMENTUM RELATION; GATE OXIDE; GATE-LEAKAGE CURRENT; GRAPHENES; HIGH-ENERGY ELECTRON; LINEAR ENERGY; NUMERICAL CALCULATION; SILICON ELECTRONICS; SURFACE ELECTRON DENSITY;

ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; GRAPHITE; HETEROJUNCTIONS; MESFET DEVICES; TWO DIMENSIONAL;

LEAKAGE CURRENTS;

EID: 76749091474 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5509-3 Document Type: Article

Times cited : (5)

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