메뉴 건너뛰기




Volumn 12, Issue 4, 2013, Pages 566-577

RF performance limits and operating physics arising from the lack of a bandgap in graphene transistors

Author keywords

Bandgap; cutoff frequency; field effect transistor (FET); graphene; high frequency behavior; output conductance; parasitic capacitance; parasitic resistance; radio frequency (RF) behavior

Indexed keywords

HIGH FREQUENCY HF; OUTPUT CONDUCTANCE; PARASITIC CAPACITANCE; PARASITIC RESISTANCES; RADIO FREQUENCIES;

EID: 84880447030     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2260351     Document Type: Article
Times cited : (14)

References (51)
  • 2
    • 77955231284 scopus 로고    scopus 로고
    • Graphene transistors
    • Jul
    • F. Schwierz, "Graphene transistors," Nature Nanotechnol., vol. 5, no. 7, pp. 487-496, Jul. 2010.
    • (2010) Nature Nanotechnol. , vol.5 , Issue.7 , pp. 487-496
    • Schwierz, F.1
  • 6
    • 77956444490 scopus 로고    scopus 로고
    • Silicon nitride gate dielectrics and band gap engineering in graphene layers
    • Sep
    • W. Zhu, D. Neumayer, V. Perebeinos, and P. Avouris, "Silicon nitride gate dielectrics and band gap engineering in graphene layers," Nano Lett., vol. 10, no. 9, pp. 3572-3576, Sep. 2010.
    • (2010) Nano Lett. , vol.10 , Issue.9 , pp. 3572-3576
    • Zhu, W.1    Neumayer, D.2    Perebeinos, V.3    Avouris, P.4
  • 7
    • 79953766791 scopus 로고    scopus 로고
    • Electronics: Industry-compatible graphene transistors
    • Apr
    • F. Schwierz, "Electronics: Industry-compatible graphene transistors," Nature, vol. 472, no. 7341, pp. 41-42, Apr. 2011.
    • (2011) Nature , vol.472 , Issue.7341 , pp. 41-42
    • Schwierz, F.1
  • 10
    • 33747626322 scopus 로고    scopus 로고
    • Controlling the electronic structure of bilayer graphene
    • DOI 10.1126/science.1130681
    • T. Ohta, A. Bostwick, T. Seyller, K. Horn, and E. Rotenberg, "Controlling the electronic structure of bilayer graphene," Science, vol. 313, no. 5789, pp. 951-954, Aug. 2006. (Pubitemid 44267382)
    • (2006) Science , vol.313 , Issue.5789 , pp. 951-954
    • Ohta, T.1    Bostwick, A.2    Seyller, T.3    Horn, K.4    Rotenberg, E.5
  • 11
    • 34147162745 scopus 로고    scopus 로고
    • Performance projections for ballistic graphene nanoribbon field-effect transistors
    • DOI 10.1109/TED.2007.891872
    • G. Liang, N. Neophytou, D. E. Nikonov, and M. S. Lundstrom, "Performance projections for ballistic graphene nanoribbon field-effect transistors," IEEE Trans. Electron Devices, vol. 54, no. 4, pp. 677-682, Apr. 2007. (Pubitemid 46563359)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.4 , pp. 677-682
    • Liang, G.1    Neophytou, N.2    Nikonov, D.E.3    Lundstrom, M.S.4
  • 12
    • 34548658933 scopus 로고    scopus 로고
    • Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
    • Sep
    • G. Liang, N. Neophytou, M. S. Lundstrom, and D. E. Nikonov, "Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation," J. Appl. Phys., vol. 102, no. 5, pp. 054307-1-054307-7, Sep. 2007.
    • (2007) J. Appl. Phys. , vol.102 , Issue.5 , pp. 054307-054301
    • Liang, G.1    Neophytou, N.2    Lundstrom, M.S.3    Nikonov, D.E.4
  • 13
    • 34547828973 scopus 로고    scopus 로고
    • Simulation of graphene nanoribbon field-effect transistors
    • DOI 10.1109/LED.2007.901680
    • G. Fiori and G. Iannaccone, "Simulation of graphene nanoribbon fieldeffect transistors," IEEE Electron Device Lett., vol. 28, no. 8, pp. 760-762, Aug. 2007. (Pubitemid 47243564)
    • (2007) IEEE Electron Device Letters , vol.28 , Issue.8 , pp. 760-762
    • Fiori, G.1    Iannaccone, G.2
  • 14
    • 38849172702 scopus 로고    scopus 로고
    • Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study
    • DOI 10.1109/TED.2007.902692
    • Y. Ouyang, Y. Yoon, and J. Guo, "Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2223-2231, Sep. 2007. (Pubitemid 351485740)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.9 , pp. 2223-2231
    • Ouyang, Y.1    Yoon, Y.2    Guo, J.3
  • 15
    • 79957456506 scopus 로고    scopus 로고
    • Assessment of high-frequency performance limits of graphene field-effect transistors
    • Jun.
    • J. Chauhan and J. Guo, "Assessment of high-frequency performance limits of graphene field-effect transistors," Nano Res., vol. 4, no. 6, pp. 571-579, Jun. 2011.
    • (2011) Nano Res. , vol.4 , Issue.6 , pp. 571-579
    • Chauhan, J.1    Guo, J.2
  • 19
    • 84864255490 scopus 로고    scopus 로고
    • A computational study of highfrequency behavior of graphene field-effect transistors
    • J. Chauhan, L. Liu, Y. Lu, and J. Guo, "A computational study of highfrequency behavior of graphene field-effect transistors," J. Appl. Phys., vol. 111, no. 9, pp. 094313-1-094313-7, May 2012.
    • J. Appl. Phys. , vol.111 , Issue.9 , pp. 0943131-0943137
    • Chauhan, J.1    Liu, L.2    Lu, Y.3    Guo, J.4
  • 20
    • 84863070102 scopus 로고    scopus 로고
    • Role of dissipative quantum transport in DC, RF, and self-heating characteristics of short channel graphene FETs
    • Dec.
    • Y. Lu and J. Guo, "Role of dissipative quantum transport in DC, RF, and self-heating characteristics of short channel graphene FETs," in Proc. IEEE Int. Electron Devices Meet, Dec. 2011, pp. 11.5.1-11.5.4.
    • (2011) Proc. IEEE Int. Electron Devices Meet , pp. 1151-1154
    • Lu, Y.1    Guo, J.2
  • 21
    • 80052619975 scopus 로고    scopus 로고
    • On the importance of bandgap formation in graphene for analog device applications
    • Sep
    • S. Das and J. Appenzeller, "On the importance of bandgap formation in graphene for analog device applications," IEEE Trans. Nanotechnol., vol. 10, no. 5, pp. 1093-1098, Sep. 2011.
    • (2011) IEEE Trans. Nanotechnol. , vol.10 , Issue.5 , pp. 1093-1098
    • Das, S.1    Appenzeller, J.2
  • 23
    • 79955738723 scopus 로고    scopus 로고
    • A first principles theoretical examination of graphenebased field effect transistors
    • J. G. Champlain, "A first principles theoretical examination of graphenebased field effect transistors," J. Appl. Phys., vol. 109, no. 8, pp. 084515- 1-084515-19, Apr. 2011.
    • J. Appl. Phys. , vol.109 , Issue.8 , pp. 0845151-08451519
    • Champlain, J.G.1
  • 24
    • 80055018464 scopus 로고    scopus 로고
    • Scaling of high-field transport and localized heating in graphene transistors
    • Oct
    • M.-H. Bae, S. Islam, V. E. Dorgan, and E. Pop, "Scaling of high-field transport and localized heating in graphene transistors," ACS Nano, vol. 5, no. 10, pp. 7936-7944, Oct. 2011.
    • (2011) ACS Nano , vol.5 , Issue.10 , pp. 7936-7944
    • Bae, M.-H.1    Islam, S.2    Dorgan, V.E.3    Pop, E.4
  • 25
    • 84857001655 scopus 로고    scopus 로고
    • Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
    • Dec.
    • A. Paussa,M. Geromel, P. Palestri, M. Bresciani, D. Esseni, and L. Selmi, "Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms," in Proc. IEEE Int. Electron Devices Meet., Dec. 2011, pp. 11.7.1-11.7.4.
    • (2011) Proc. IEEE Int. Electron Devices Meet. , pp. 1171-1174
    • Paussam. Geromel, A.1    Palestri, P.2    Bresciani, M.3    Esseni, D.4    Selmi, L.5
  • 27
    • 79959516000 scopus 로고    scopus 로고
    • RF performance potential of array-based carbonnanotube transistors-Part I: Intrinsic results
    • Jul
    • N. Paydavosi, A. U. Alam, S. Ahmed, K. D. Holland, J. P. Rebstock, and M. Vaidyanathan, "RF performance potential of array-based carbonnanotube transistors-Part I: Intrinsic results," IEEE Trans. Electron Devices, vol. 58, no. 7, pp. 1928-1940, Jul. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.7 , pp. 1928-1940
    • Paydavosi, N.1    Alam, A.U.2    Ahmed, S.3    Holland, K.D.4    Rebstock, J.P.5    Vaidyanathan, M.6
  • 28
    • 79959493646 scopus 로고    scopus 로고
    • RF performance potential of array-based carbonnanotube transistors-Part II: Extrinsic results
    • Jul
    • N. Paydavosi, J. P. Rebstock, K. D. Holland, S. Ahmed, A. U. Alam, and M. Vaidyanathan, "RF performance potential of array-based carbonnanotube transistors-Part II: Extrinsic results," IEEE Trans. Electron Devices, vol. 58, no. 7, pp. 1941-1951, Jul. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.7 , pp. 1941-1951
    • Paydavosi, N.1    Rebstock, J.P.2    Holland, K.D.3    Ahmed, S.4    Alam, A.U.5    Vaidyanathan, M.6
  • 29
    • 78751681254 scopus 로고    scopus 로고
    • Self-consistent simulation of array-based CNFETs: Impact of tube pitch on RF performance
    • Pisa, Italy, Oct.
    • K. Holland, N. Paydavosi, and M. Vaidyanathan, Self-consistent simulation of array-based CNFETs: Impact of tube pitch on RF performance, presented at the 14th Int. Workshop Comput. Electron., Pisa, Italy, Oct. 2010.
    • (2010) 14th Int. Workshop Comput. Electron.
    • Holland, K.1    Paydavosi, N.2    Vaidyanathan, M.3
  • 31
    • 70349329338 scopus 로고    scopus 로고
    • COMSOL Inc., Stockholm Sweden
    • "COMSOL multiphysics," COMSOL Inc., Stockholm Sweden, 2004.
    • (2004) COMSOL Multiphysics
  • 32
    • 60349109113 scopus 로고    scopus 로고
    • Realization of a high mobility dual-gated graphene fieldeffect transistor with Al2O3 dielectric
    • Feb
    • S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, "Realization of a high mobility dual-gated graphene fieldeffect transistor with Al2O3 dielectric," Appl. Phys. Lett., vol. 94, no. 6, pp. 062107-1-062107-3, Feb. 2009.
    • (2009) Appl. Phys. Lett. , vol.94 , Issue.6 , pp. 0621071-0621073
    • Kim, S.1    Nah, J.2    Jo, I.3    Shahrjerdi, D.4    Colombo, L.5    Yao, Z.6    Tutuc, E.7    Banerjee, S.K.8
  • 33
    • 77954732824 scopus 로고    scopus 로고
    • Graphene field-effect transistors with self-aligned gates
    • D. B. Farmer, Y.-M. Lin, and P. Avouris, "Graphene field-effect transistors with self-aligned gates," Appl. Phys. Lett., vol. 97, no. 1, pp. 013103-1- 013103-3, Jul. 2010.
    • Appl. Phys. Lett. , vol.97 , Issue.1 , pp. 0131031-0131033
    • Farmer, D.B.1    Lin, Y.-M.2    Avouris, P.3
  • 34
    • 41849125958 scopus 로고    scopus 로고
    • 2
    • DOI 10.1038/nnano.2008.58, PII NNANO200858
    • J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, "Intrinsic and extrinsic performance limits of graphene devices on SiO2, " Nature Nanotechnol., vol. 3, no. 4, pp. 206-209, Apr. 2008. (Pubitemid 351499398)
    • (2008) Nature Nanotechnology , vol.3 , Issue.4 , pp. 206-209
    • Chen, J.-H.1    Jang, C.2    Xiao, S.3    Ishigami, M.4    Fuhrer, M.S.5
  • 36
    • 62449294431 scopus 로고    scopus 로고
    • Understanding the frequency- and time-dependent behavior of ballistic carbon-nanotube transistors
    • Mar
    • N. Paydavosi, K. D. Holland, M. M. Zargham, and M. Vaidyanathan, "Understanding the frequency- and time-dependent behavior of ballistic carbon-nanotube transistors," IEEE Trans. Nanotechnol., vol. 8, no. 2, pp. 234-244, Mar. 2009.
    • (2009) IEEE Trans. Nanotechnol. , vol.8 , Issue.2 , pp. 234-244
    • Paydavosi, N.1    Holland, K.D.2    Zargham, M.M.3    Vaidyanathan, M.4
  • 38
    • 0001124898 scopus 로고
    • Highly convergent schemes for the calculation of bulk and surface Green functions
    • Apr
    • M. P. L. Sancho, J. M. L. Sancho, J. M. L. Sancho, and J. Rubio, "Highly convergent schemes for the calculation of bulk and surface Green functions," J. Phys. F: Met. Phys., vol. 15, no. 4, pp. 851-858, Apr. 1985.
    • (1985) J. Phys. F: Met. Phys. , vol.15 , Issue.4 , pp. 851-858
    • Sancho, M.P.L.1    Sancho, J.M.L.2    Sancho, J.M.L.3    Rubio, J.4
  • 39
    • 33845426952 scopus 로고    scopus 로고
    • Two-dimensional quantum mechanical modeling of nanotransistors
    • Feb
    • A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal, "Two-dimensional quantum mechanical modeling of nanotransistors," J. Appl. Phys., vol. 91, no. 4, pp. 2343-2354, Feb. 2002.
    • (2002) J. Appl. Phys. , vol.91 , Issue.4 , pp. 2343-2354
    • Svizhenko, A.1    Anantram, M.P.2    Govindan, T.R.3    Biegel, B.4    Venugopal, R.5
  • 40
    • 57349090160 scopus 로고    scopus 로고
    • Current saturation in zero-bandgap, to-gated graphene field-effect transistors
    • Nov
    • I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, to-gated graphene field-effect transistors," Nature Nanotechnol., vol. 3, no. 11, pp. 654-659, Nov. 2008.
    • (2008) Nature Nanotechnol. , vol.3 , Issue.11 , pp. 654-659
    • Meric, I.1    Han, M.Y.2    Young, A.F.3    Ozyilmaz, B.4    Kim, P.5    Shepard, K.L.6
  • 41
    • 67650763508 scopus 로고    scopus 로고
    • High-field transport and velocity saturation in graphene
    • Jul
    • J. Chauhan and J. Guo, "High-field transport and velocity saturation in graphene," Appl. Phys. Lett., vol. 95, no. 2, pp. 023120-1-023120-3, Jul. 2009.
    • (2009) Appl. Phys. Lett. , vol.95 , Issue.2 , pp. 0231201-0231203
    • Chauhan, J.1    Guo, J.2
  • 42
    • 70349097243 scopus 로고    scopus 로고
    • Velocity saturation in intrinsic graphene
    • Aug
    • R. S. Shishir and D. K. Ferry, "Velocity saturation in intrinsic graphene," J. Phys.: Condens. Matter, vol. 21, no. 34, pp. 344201-1-344201-5, Aug. 2009.
    • (2009) J. Phys.: Condens. Matter , vol.21 , Issue.34 , pp. 3442011-3442015
    • Shishir, R.S.1    Ferry, D.K.2
  • 44
    • 79952445612 scopus 로고    scopus 로고
    • The origins and limits of metal-graphene junction resistance
    • Mar
    • F. Xia, V. Perebeinos, Y.-M. Lin, Y. Wu, and P. Avouris, "The origins and limits of metal-graphene junction resistance," Nature Nanotechnol., vol. 6, no. 3, pp. 179-184, Mar. 2011.
    • (2011) Nature Nanotechnol. , vol.6 , Issue.3 , pp. 179-184
    • Xia, F.1    Perebeinos, V.2    Lin, Y.-M.3    Wu, Y.4    Avouris, P.5
  • 46
    • 84913715715 scopus 로고
    • The design of tetrode transistor amplifiers
    • Jul
    • J. G. Linvill and L. G. Schimpf, "The design of tetrode transistor amplifiers," Bell Syst. Tech. J., vol. 35, no. 4, pp. 813-840, Jul. 1956.
    • (1956) Bell Syst. Tech. J. , vol.35 , Issue.4 , pp. 813-840
    • Linvill, J.G.1    Schimpf, L.G.2
  • 47
    • 84936896840 scopus 로고
    • Power gain in feedback amplifier
    • Jun
    • S. Mason, "Power gain in feedback amplifier," IRE Trans. Circuit Theory, vol. 1, no. 2, pp. 20-25, Jun. 1954.
    • (1954) IRE Trans. Circuit Theory , vol.1 , Issue.2 , pp. 20-25
    • Mason, S.1
  • 48
    • 33744946793 scopus 로고    scopus 로고
    • The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance
    • DOI 10.1016/j.sse.2006.04.010, PII S0038110106001146
    • T. C. Lim and G. A. Armstrong, "The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance," Solid-State Electron., vol. 50, no. 5, pp. 774-783, May 2006. (Pubitemid 43849876)
    • (2006) Solid-State Electronics , vol.50 , Issue.5 , pp. 774-783
    • Lim, T.C.1    Armstrong, G.A.2
  • 49
    • 0033080162 scopus 로고    scopus 로고
    • Extrapolated fmax of heterojunction bipolar transistors
    • Feb
    • M. Vaidyanathan and D. L. Pulfrey, "Extrapolated fmax of heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 46, no. 2, pp. 301- 309, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.2 , pp. 301-309
    • Vaidyanathan, M.1    Pulfrey, D.L.2
  • 51
    • 31144439296 scopus 로고    scopus 로고
    • Highfrequency performance projections for ballistic carbon-nanotube transistors
    • Jan
    • S. Hasan, S. Salahuddin, M. Vaidyanathan, and M. A. Alam, "Highfrequency performance projections for ballistic carbon-nanotube transistors," IEEE Trans. Nanotechnol., vol. 5, no. 1, pp. 14-22, Jan. 2006.
    • (2006) IEEE Trans. Nanotechnol. , vol.5 , Issue.1 , pp. 14-22
    • Hasan, S.1    Salahuddin, S.2    Vaidyanathan, M.3    Alam, M.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.