Extrapolated fmax of heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 301-309

  Vaidyanathan, Mani ^a   Pulfrey, David L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Circuit modeling; Circuit topology; Gain measurement; Heterojunction bipolar transistors; High frequency power gain; Maximum oscillation frequency

Indexed keywords

CAPACITANCE; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; GAIN MEASUREMENT; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

MAXIMUM OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033080162     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740894     Document Type: Article

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