SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

A first principles theoretical examination of graphene-based field effect transistors

(1) Champlain, James G a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION CURRENTS; EXTERNAL RESISTANCE; FIRST-PRINCIPLES; FIRST-PRINCIPLES APPROACHES; HIGH FREQUENCY PERFORMANCE; PINCHOFF; THEORETICAL RESULT; TRANSFER CHARACTERISTICS; UNDER GATE;

GRAPHENE;

FIELD EFFECT TRANSISTORS;

EID: 79955738723 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3573517 Document Type: Article

Times cited : (92)

References (45)

1
- 4043108064
- 10.1103/PhysRevB.66.035412
- S. Reich, J. Maultzsch, C. Thomsen, and P. Ordejon, Phys. Rev. B 66, 035412 (2002). 10.1103/PhysRevB.66.035412
- (2002) Phys. Rev. B , vol.66 , pp. 035412
- Reich, S.¹ Maultzsch, J.² Thomsen, C.³ Ordejon, P.⁴

2
- 27744534165
- Two-dimensional gas of massless Dirac fermions in graphene
- DOI 10.1038/nature04233, PII N04233
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. M. Grigorieva, S. V. Dubonos, and A. A. Firsov, Nature 438, 197 (2005). 10.1038/nature04233 (Pubitemid 41599867)
- (2005) Nature , vol.438 , Issue.7065 , pp. 197-200
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Katsnelson, M.I.⁵ Grigorieva, I.V.⁶ Dubonos, S.V.⁷ Firsov, A.A.⁸

3
- 34548446361
- Carrier statistics and quantum capacitance of graphene sheets and ribbons
- DOI 10.1063/1.2776887
- T. Fang, A. Konar, X. Huili, and D. Jena, Appl. Phys. Lett. 91, 092109 (2007). 10.1063/1.2776887 (Pubitemid 47352294)
- (2007) Applied Physics Letters , vol.91 , Issue.9 , pp. 092109
- Fang, T.¹ Konar, A.² Xing, H.³ Jena, D.⁴

4
- 36749055294
- A self-consistent theory for graphene transport
- DOI 10.1073/pnas.0704772104
- S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma, Proc. Natl. Acad.Sci. U.S.A. 104, 18392 (2007). 10.1073/pnas.0704772104 (Pubitemid 350210707)
- (2007) Proceedings of the National Academy of Sciences of the United States of America , vol.104 , Issue.47 , pp. 18392-18397
- Adam, S.¹ Hwang, E.H.² Galitski, V.M.³ Das Sarma, S.⁴

5
- 65849200089
- 10.1016/j.ssc.2009.02.041
- S. Adam, E. H. Hwang, E. Rossi, and S. Das Sarma, Solid State Commun. 149, 1072 (2009). 10.1016/j.ssc.2009.02.041
- (2009) Solid State Commun. , vol.149 , pp. 1072
- Adam, S.¹ Hwang, E.H.² Rossi, E.³ Das Sarma, S.⁴

6
- 70349653537
- 10.1063/1.3224887
- J. L. Tedesco, B. L. VanMil, R. L. Myers-Ward, J. M. McCrate, S. A. Kitt, P. M. Campbell, G. G. Jernigan, J. C. Culbertson, C. R. Eddy, and D. K. Gaskill, Appl. Phys. Lett. 95, 122102 (2009). 10.1063/1.3224887
- (2009) Appl. Phys. Lett. , vol.95 , pp. 122102
- Tedesco, J.L.¹ Vanmil, B.L.² Myers-Ward, R.L.³ McCrate, J.M.⁴ Kitt, S.A.⁵ Campbell, P.M.⁶ Jernigan, G.G.⁷ Culbertson, J.C.⁸ Eddy, C.R.⁹ Gaskill, D.K.¹⁰

7
- 59949098337
- 10.1103/RevModPhys.81.109
- A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009). 10.1103/RevModPhys.81.109
- (2009) Rev. Mod. Phys. , vol.81 , pp. 109
- Neto, A.H.C.¹ Guinea, F.² Peres, N.M.R.³ Novoselov, K.S.⁴ Geim, A.K.⁵

8
- 57849165777
- San Jose, CA, 10-13 November, (IEEE, New York, 2008)
- K. L. Shepard, I. Meric, and P. Kim, in Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) San Jose, CA, 10-13 November 2008, pp. 406-411 (IEEE, New York, 2008)
- (2008) Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) , pp. 406-411
- Shepard, K.L.¹ Meric, I.² Kim, P.³

9
- 57349090160
- 10.1038/nnano.2008.268
- I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, Nature Nanotechnol. 3, 654 (2008). 10.1038/nnano.2008.268
- (2008) Nature Nanotechnol. , vol.3 , pp. 654
- Meric, I.¹ Han, M.Y.² Young, A.F.³ Ozyilmaz, B.⁴ Kim, P.⁵ Shepard, K.L.⁶

10
- 65849215626
- 10.1016/j.ssc.2009.02.042
- J. H. Chen, C. Jang, M. Ishigami, S. Xiao, W. G. Cullen, E. D. Williams, and M. S. Fuhrer, Solid State Commun. 149, 1080 (2009). 10.1016/j.ssc.2009.02. 042
- (2009) Solid State Commun. , vol.149 , pp. 1080
- Chen, J.H.¹ Jang, C.² Ishigami, M.³ Xiao, S.⁴ Cullen, W.G.⁵ Williams, E.D.⁶ Fuhrer, M.S.⁷

11
- 77955232280
- 10.1063/1.3357398
- S. A. Thiele, J. A. Schaefer, and F. Schwierz, J. Appl. Phys. 107, 094505 (2010). 10.1063/1.3357398
- (2010) J. Appl. Phys. , vol.107 , pp. 094505
- Thiele, S.A.¹ Schaefer, J.A.² Schwierz, F.³

12
- 77649180726
- 10.1109/TED.2009.2038644
- M. G. Ancona, IEEE Trans. Electron Devices 57, 681 (2010). 10.1109/TED.2009.2038644
- (2010) IEEE Trans. Electron Devices , vol.57 , pp. 681
- Ancona, M.G.¹

13
- 36149007340
- 10.1103/PhysRev.71.622
- P. R. Wallace, Phys. Rev. 71, 622 (1947). 10.1103/PhysRev.71.622
- (1947) Phys. Rev. , vol.71 , pp. 622
- Wallace, P.R.¹

14
- 67649304648
- 10.1109/LED.2009.2020699
- J. S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P. M. Campbell, G. Jernigan, J. L. Tedesco, B. VanMil, R. Myers-Ward, C. R. Eddy, and D. K. Gaskill, IEEE Electron Device Lett. 30, 650 (2009). 10.1109/LED.2009.2020699
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 650
- Moon, J.S.¹ Curtis, D.² Hu, M.³ Wong, D.⁴ McGuire, C.⁵ Campbell, P.M.⁶ Jernigan, G.⁷ Tedesco, J.L.⁸ Vanmil, B.⁹ Myers-Ward, R.¹⁰ Eddy, C.R.¹¹ Gaskill, D.K.¹²

15
- 76249106631
- 10.1126/science.1184289
- Y. M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H. Y. Chiu, A. Grill, and P. Avouris, Science 327, 662 (2010). 10.1126/science.1184289
- (2010) Science , vol.327 , pp. 662
- Lin, Y.M.¹ Dimitrakopoulos, C.² Jenkins, K.A.³ Farmer, D.B.⁴ Chiu, H.Y.⁵ Grill, A.⁶ Avouris, P.⁷

16
- 77954170748
- 10.1002/pssb.200982958
- C. Hummel, F. Schwierz, A. Hanisch, and J. Pezoldt, Phys. Status Solidi B 247, 903 (2010). 10.1002/pssb.200982958
- (2010) Phys. Status Solidi B , vol.247 , pp. 903
- Hummel, C.¹ Schwierz, F.² Hanisch, A.³ Pezoldt, J.⁴

17
- 64849110244
- 23-25 June, Santa Barbara, CA, (IEEE, New York, 2008)
- J. Kedzierski, H. Pei-Lan, P. Healey, P. Wyatt, and C. Keast, in Proceedings of the 66th Annual Device Research Conference (DRC) 23-25 June 2008, Santa Barbara, CA, pp. 25-26 (IEEE, New York, 2008)
- (2008) Proceedings of the 66th Annual Device Research Conference (DRC) , pp. 25-26
- Kedzierski, J.¹ Pei-Lan, H.² Healey, P.³ Wyatt, P.⁴ Keast, C.⁵

18
- 66749119012
- 10.1126/science.1171245
- L. Xuesong, C. Weiwei, A. Jinho, K. Seyoung, N. Junghyo, Y. Dongxing, R. Piner, A. Velamakanni, J. Inhwa, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, Science 324, 1312 (2009). 10.1126/science.1171245
- (2009) Science , vol.324 , pp. 1312
- Xuesong, L.¹ Weiwei, C.² Jinho, A.³ Seyoung, K.⁴ Junghyo, N.⁵ Dongxing, Y.⁶ Piner, R.⁷ Velamakanni, A.⁸ Inhwa, J.⁹ Tutuc, E.¹⁰ Banerjee, S.K.¹¹ Colombo, L.¹² Ruoff, R.S.¹³

19
- 70349685099
- 10.1063/1.3224913
- E. Sutter, P. Albrecht, and P. Sutter, Appl. Phys. Lett. 95, 133109 (2009). 10.1063/1.3224913
- (2009) Appl. Phys. Lett. , vol.95 , pp. 133109
- Sutter, E.¹ Albrecht, P.² Sutter, P.³

20
- 59649099717
- 10.1038/nature07719
- K. Keun Soo, Z. Yue, J. Houk, L. Sang Yoon, K. Jong Min, K. S. Kim, A. Jong-Hyun, P. Kim, C. Jae-Young, and H. Byung Hee, Nature 457, 706 (2009). 10.1038/nature07719
- (2009) Nature , vol.457 , pp. 706
- Keun Soo, K.¹ Yue, Z.² Houk, J.³ Sang Yoon, L.⁴ Jong Min, K.⁵ Kim, K.S.⁶ Jong-Hyun, A.⁷ Kim, P.⁸ Jae-Young, C.⁹ Byung Hee, H.¹⁰

21
- 77749283489
- 10.1063/1.3309018
- C. Helin, Y. Qingkai, R. Colby, D. Pandey, C. S. Park, L. Jie, D. Zemlyanov, I. Childres, V. Drachev, E. A. Stach, M. Hussain, L. Hao, S. S. Pei, and Y. P. Chen, J. Appl. Phys. 107, 044310 (2010). 10.1063/1.3309018
- (2010) J. Appl. Phys. , vol.107 , pp. 044310
- Helin, C.¹ Qingkai, Y.² Colby, R.³ Pandey, D.⁴ Park, C.S.⁵ Jie, L.⁶ Zemlyanov, D.⁷ Childres, I.⁸ Drachev, V.⁹ Stach, E.A.¹⁰ Hussain, M.¹¹ Hao, L.¹² Pei, S.S.¹³ Chen, Y.P.¹⁴

22
- 72949097851
- 10.1109/LED.2009.2034876
- Y. M. Lin, H. Y. Chiu, K. A. Jenkins, D. B. Farmer, P. Avouris, and A. Valdes-Garcia, IEEE Electron Device Lett. 31, 68 (2010). 10.1109/LED.2009. 2034876
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 68
- Lin, Y.M.¹ Chiu, H.Y.² Jenkins, K.A.³ Farmer, D.B.⁴ Avouris, P.⁵ Valdes-Garcia, A.⁶

23
- 84937647369
- 10.1109/JRPROC.1952.273964
- W. Shockley, Proc. IRE 40, 1365 (1952). 10.1109/JRPROC.1952.273964
- (1952) Proc. IRE , vol.40 , pp. 1365
- Shockley, W.¹

24
- 0346163121
- 10.1109/T-ED.1963.15076
- R. R. Bockemuehl, IEEE Trans. Electron Devices 10, 31 (1963). 10.1109/T-ED.1963.15076
- (1963) IEEE Trans. Electron Devices , vol.10 , pp. 31
- Bockemuehl, R.R.¹

25
- 60349109113
- 10.1063/1.3077021
- S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Y. Zhen, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 94, 062107 (2009). 10.1063/1.3077021
- (2009) Appl. Phys. Lett. , vol.94 , pp. 062107
- Kim, S.¹ Nah, J.² Jo, I.³ Shahrjerdi, D.⁴ Colombo, L.⁵ Zhen, Y.⁶ Tutuc, E.⁷ Banerjee, S.K.⁸

26
- 29144527020
- 3 films grown by metalorganic chemical vapor deposition for advanced complementary metal-oxide semiconductor gate dielectric applications
- DOI 10.1557/JMR.2005.0196
- S. Skordas, F. Papadatos, S. Consiglio, E. T. Eisenbraun, A. E. Kaloyeros, and E. P. Gusev, J. Mater. Res. 20, 1536 (2005). 10.1557/JMR.2005. 0196 (Pubitemid 41793910)
- (2005) Journal of Materials Research , vol.20 , Issue.6 , pp. 1536-1543
- Skordas, S.¹ Papadatos, F.² Consiglio, S.³ Eisenbraun, E.T.⁴ Kaloyeros, A.E.⁵ Gusev, E.P.⁶

27
- 37349043733
- Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition
- DOI 10.1016/j.tsf.2007.05.064, PII S0040609007008589
- C. Cibert, H. Hidalgo, C. Champeaux, P. Tristant, C. Tixier, J. Desmaison, and A. Catherinot, Thin Solid Films 516, 1290 (2008). 10.1016/j.tsf.2007.05.064 (Pubitemid 350298352)
- (2008) Thin Solid Films , vol.516 , Issue.6 , pp. 1290-1296
- Cibert, C.¹ Hidalgo, H.² Champeaux, C.³ Tristant, P.⁴ Tixier, C.⁵ Desmaison, J.⁶ Catherinot, A.⁷

28
- 0014812249
- 10.1103/PhysRevB.2.1
- D. E. Eastman, Phys. Rev. B 2, 1 (1970). 10.1103/PhysRevB.2.1
- (1970) Phys. Rev. B , vol.2 , pp. 1
- Eastman, D.E.¹

29
- 0001972254
- 10.1088/0953-8984/9/1/004
- C. Oshima and A. Nagashima, J. Phys.: Condens. Matter 9, 1 (1997). 10.1088/0953-8984/9/1/004
- (1997) J. Phys.: Condens. Matter , vol.9 , pp. 1
- Oshima, C.¹ Nagashima, A.²

30
- 48249135493
- 10.1103/PhysRevLett.101.026803
- G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008). 10.1103/PhysRevLett.101.026803
- (2008) Phys. Rev. Lett. , vol.101 , pp. 026803
- Giovannetti, G.¹ Khomyakov, P.A.² Brocks, G.³ Karpan, V.M.⁴ Van Den Brink, J.⁵ Kelly, P.J.⁶

31
- 35648963746
- 10.1103/PhysRevB.76.155431
- F. Rana, Phys. Rev. B 76, 155431 (2007). 10.1103/PhysRevB.76.155431
- (2007) Phys. Rev. B , vol.76 , pp. 155431
- Rana, F.¹

32
- 38849150544
- Measurement of ultrafast carrier dynamics in epitaxial graphene
- DOI 10.1063/1.2837539
- J. M. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, Appl. Phys. Lett. 92, 042116 (2008). 10.1063/1.2837539 (Pubitemid 351198838)
- (2008) Applied Physics Letters , vol.92 , Issue.4 , pp. 042116
- Dawlaty, J.M.¹ Shivaraman, S.² Chandrashekhar, M.³ Rana, F.⁴ Spencer, M.G.⁵

33
- 65549144856
- 10.1103/PhysRevB.79.115447
- F. Rana, P. A. George, J. H. Strait, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, and M. G. Spencer, Phys. Rev. B 79, 115447 (2009). 10.1103/PhysRevB.79.115447
- (2009) Phys. Rev. B , vol.79 , pp. 115447
- Rana, F.¹ George, P.A.² Strait, J.H.³ Dawlaty, J.⁴ Shivaraman, S.⁵ Chandrashekhar, M.⁶ Spencer, M.G.⁷

34
- 0004017678
- 2nd ed., Cha, (W. H. Freeman and Company, New York)
- C. Kittel and H. Kroemer, Thermal Physics, 2nd ed., Chap., pp. 379-381 (W. H. Freeman and Company, New York, 1980)
- (1980) Thermal Physics , pp. 379-381
- Kittel, C.¹ Kroemer, H.²

35
- 37249020423
- Measurement of scattering rate and minimum conductivity in graphene
- DOI 10.1103/PhysRevLett.99.246803
- Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, Phys. Rev. Lett. 99, 246803 (2007). 10.1103/PhysRevLett.99.246803 (Pubitemid 350276599)
- (2007) Physical Review Letters , vol.99 , Issue.24 , pp. 246803
- Tan, Y.-W.¹ Zhang, Y.² Bolotin, K.³ Zhao, Y.⁴ Adam, S.⁵ Hwang, E.H.⁶ Das Sarma, S.⁷ Stormer, H.L.⁸ Kim, P.⁹

36
- 56849108175
- 10.1021/nn800354m
- H. E. Romero, N. Shen, P. Joshi, H. R. Gutierrez, S. A. Tadigadapa, J. O. Sofo, and P. C. Eklund, ACS Nano 2, 2037 (2008). 10.1021/nn800354m
- (2008) ACS Nano , vol.2 , pp. 2037
- Romero, H.E.¹ Shen, N.² Joshi, P.³ Gutierrez, H.R.⁴ Tadigadapa, S.A.⁵ Sofo, J.O.⁶ Eklund, P.C.⁷

37
- 7444220645
- Electric field in atomically thin carbon films
- DOI 10.1126/science.1102896
- K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
- (2004) Science , vol.306 , Issue.5696 , pp. 666-669
- Novoselov, K.S.¹ Geim, A.K.² Morozov, S.V.³ Jiang, D.⁴ Zhang, Y.⁵ Dubonos, S.V.⁶ Grigorieva, I.V.⁷ Firsov, A.A.⁸

38
- 77955229164
- 10.1038/nnano.2010.90
- M. Freitag, H.-Y. Chiu, M. Steiner, V. Perebeinos, and P. Avouris, Nature Nanotechnol. 5, 497 (2010). 10.1038/nnano.2010.90
- (2010) Nature Nanotechnol. , vol.5 , pp. 497
- Freitag, M.¹ Chiu, H.-Y.² Steiner, M.³ Perebeinos, V.⁴ Avouris, P.⁵

39
- 67650423945
- 10.1109/LED.2009.2020615
- J. Kedzierski, H. Pei-Lan, A. Reina, K. Jing, P. Healey, P. Wyatt, and C. Keast, Electron Device Lett. 30, 745 (2009). 10.1109/LED.2009.2020615
- (2009) Electron Device Lett. , vol.30 , pp. 745
- Kedzierski, J.¹ Pei-Lan, H.² Reina, A.³ Jing, K.⁴ Healey, P.⁵ Wyatt, P.⁶ Keast, C.⁷

40
- 77950084994
- 10.1109/LED.2010.2040132
- J. S. Moon, D. Curtis, S. Bui, M. Hu, D. K. Gaskill, J. L. Tedesco, P. Asbeck, G. G. Jernigan, B. L. VanMil, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, and X. Weng, Electron Device Lett. 31, 260 (2010). 10.1109/LED.2010.2040132
- (2010) Electron Device Lett. , vol.31 , pp. 260
- Moon, J.S.¹ Curtis, D.² Bui, S.³ Hu, M.⁴ Gaskill, D.K.⁵ Tedesco, J.L.⁶ Asbeck, P.⁷ Jernigan, G.G.⁸ Vanmil, B.L.⁹ Myers-Ward, R.L.¹⁰ Eddy, C.R.¹¹ Campbell, P.M.¹² Weng, X.¹³

41
- 76749092020
- 10.1063/1.3308482
- K. Brenner and R. Murali, Appl. Phys. Lett. 96, 063104 (2010). 10.1063/1.3308482
- (2010) Appl. Phys. Lett. , vol.96 , pp. 063104
- Brenner, K.¹ Murali, R.²

42
- 71949095897
- 10.1063/1.3270533
- R. S. Sundaram, C. Gomez-Navarro, E. J. H. Lee, M. Burghard, and K. Kern, Appl. Phys. Lett. 95, 223507 (2009). 10.1063/1.3270533
- (2009) Appl. Phys. Lett. , vol.95 , pp. 223507
- Sundaram, R.S.¹ Gomez-Navarro, C.² Lee, E.J.H.³ Burghard, M.⁴ Kern, K.⁵

43
- 51749110481
- 10.1103/PhysRevB.78.121402
- B. Huard, N. Stander, J. A. Sulpizio, and D. Goldhaber-Gordon, Phys. Rev. B 78, 121402 (2008). 10.1103/PhysRevB.78.121402
- (2008) Phys. Rev. B , vol.78 , pp. 121402
- Huard, B.¹ Stander, N.² Sulpizio, J.A.³ Goldhaber-Gordon, D.⁴

44
- 77955759220
- 10.1103/PhysRevB.81.195442
- V. Perebeinos and P. Avouris, Phys. Rev. B 81, 195442 (2010). 10.1103/PhysRevB.81.195442
- (2010) Phys. Rev. B , vol.81 , pp. 195442
- Perebeinos, V.¹ Avouris, P.²

45
- 34247889934
- Carrier transport in two-dimensional graphene layers
- DOI 10.1103/PhysRevLett.98.186806
- E. H. Hwang, S. Adam, and S. Das Sarma, Phys. Rev. Lett. 98, 186806/1 (2007). 10.1103/PhysRevLett.98.186806 (Pubitemid 46701738)
- (2007) Physical Review Letters , vol.98 , Issue.18 , pp. 186806
- Hwang, E.H.¹ Adam, S.² Sarma, S.D.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.