Performance comparison of Graphene Nanoribbon Schottky barrier and MOS FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 757-760

  Fiori, Gianluca ^a   Yoon, Youngki ^b   Hong, Seokmin ^b   Iannaccone, Giuseppe ^a   Guo, Jing ^b  

^a UNIVERSITY OF PISA   (Italy)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; ELECTRON DEVICES; MESFET DEVICES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES;

ATOMISTIC SIMULATIONS; ATOMISTIC-STRUCTURE; CUT-OFF FREQUENCIES; DEVICE PERFORMANCES; EDGE ROUGHNESS; ELECTROSTATIC ENVIRONMENTS; GRAPHENE NANORIBBON; INTRINSIC DELAY; IONIZED IMPURITIES; LATTICE VACANCIES; MOSFETS; OFF CURRENT; ON CURRENTS; PERFOR MANCE COMPARISON; PERFORMANCE IMPROVEMENTS; SATURATION BEHAVIOR; SCHOTTKY BARRIER;

FIELD EFFECT TRANSISTORS;

EID: 47249112465     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419057     Document Type: Conference Paper

References (15)

1. K.S. Novoselov et al., "Electric field effect in atomically thin carbon films," Science, vol. 306, p. 666, 2004.
2. B. Obradovic et al., "Analysis of graphene nanoribbons as a channel material for field-effect transistors," Appl. Phys. Lett., vol. 88, p. 142102, 2006.
3. K. Nakada, M. Fujita, G. Dresselhaus, and M.S. Dresselhaus, "Edge state in graphene ribbons: Nanometer size effect and edge shape dependence," Phys. Rev. B, vol. 54, p. 17954, 1996.
4. M.C. Lemme, T.J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Elect. Dev. Lett., vol. 28, p. 282, 2007.
5. Z.H. Chen, Y.M. Lin, M.J. Rooks, and P. Avouris, "Graphene NanoRibbon Electronics," Physica E, in press, 2007.
6. M.Y. Han, B. Ozyilmaz, Y.B. Zhang, and P. Kim, "Energy bandgap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, p. 206805, 2007.
7. Y. Ouyang, Y. Yoon, J.K. Fodor, and J. Guo, "Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors," Appl. Phys. Lett., vol. 89, p. 203107, 2006.
8. G.C. Liang, N. Neophytou, D.E. Nikonov, M.S. Lundstrom, "Performance projections for ballistic graphene nanoribbon field-effect transistors," IEEE Trans. Elect. Dev., vol. 54, p. 677, 2007.
9. Y. Ouyang, Y. Yoon, and J. Guo, "Scaling behaviors of graphenen nanoribbon FETs: a 3D quantum simulation," IEEE Trans. Elect. Dev., vol. 54, p. 2223, 2007.
10. G. Fiori and G. lannaccone, "Simulation of graphene nanoribbon field effect transistors," IEEE Elect. Dev. Lett., vol. 28, p. 760, 2007.
11. Y. W. Son, M.L. Cohen, and S.G. Louie, "Energy gaps in graphene nanoribbons," Phys. Rev. Lett., vol. 97, p. 216803, 2006.
12. J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nantoube field-effect transistors," IEDM Tech. Dig., p. 703, 2004.
13. Y. Yoon and J. Guo, "Effect of edge roughness in graphene nanoribbon transistors," Appl. Phys. Lett., vol. 91, p. 073103, 2007.
14. K. Rytkönen, J. Akola, and M. Manninen, "Density functional study of alkali-metal atoms and monolayers on graphite (0001)," Phys. Rev. B, vol. 75, p. 075401, 2007.
15. G. Fiori, G. Iannaccone, and G. Klimeck, "Performance of carbon nanotube field-effect transistors with doped source and drain extensions and arbitrary geometry," IEDM Tech. Dig., p. 529, 2005.