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Volumn 103, Issue 1, 2013, Pages

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020cm-3

(8) Wieneke, Matthias a Witte, Hartmut a Lange, Karsten a Feneberg, Martin a Dadgar, Armin a Bläsing, Jürgen a Goldhahn, Rüdiger a Krost, Alois a

a OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; DIELECTRIC FUNCTIONS; ELECTRON CONCENTRATION; GE-DOPING; METAL-ORGANIC VAPOR PHASE EPITAXY; OPTICAL QUALITIES; SAPPHIRE SUBSTRATES; SURFACE DEGRADATION;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR DOPING; SILICON; SURFACE ACTIVE AGENTS; VAPORS;

GERMANIUM;

EID: 84880288657 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4812666 Document Type: Article

Times cited : (21)

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