High brightness nonpolar a-plane (1120) GaN light-emitting diodes

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Jung, Sukkoo ^a   Chang, Younghak ^a   Bang, Kyu Hyun ^a   Kim, Hyung Gu ^a   Choi, Yoon Ho ^a   Hwang, Sung Min ^b   Baik, Kwang Hyeon ^b  

^a LG Electronics Inc   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; A-PLANE GAN; AS-GROWN; BAND-EDGE EMISSION INTENSITY; BLUE SHIFT; DRIVE CURRENTS; GAN LIGHT-EMITTING DIODES; GROWTH CONDITIONS; HEXAGONAL PATTERN; HIGH BRIGHTNESS; INGAN/GAN; INTERNAL FIELD; LATERAL OVERGROWTH; LIGHT OUTPUT; LUMINESCENCE PROPERTIES; NON-POLAR; PEAK EMISSION WAVELENGTH; SMOOTH SURFACE;

GALLIUM NITRIDE; LIGHT; LUMINANCE; LUMINESCENCE; SILICON COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 84862914004     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024017     Document Type: Article

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