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Volumn 258, Issue 7, 2012, Pages 2522-2528

Classification of stacking faults and dislocations observed in nonpolar a-plane GaN epilayers using transmission electron microscopy

(5) Kong, Bo Hyun a Sun, Qian b Han, Jung b Lee, In Hwan c Cho, Hyung Koun a

a Sungkyunkwan University (South Korea)

b Yale University (United States)

c Chonbuk National University (South Korea)

Author keywords

Defects; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III V materials

Indexed keywords

DEFECTS; EPILAYERS; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

BASAL STACKING FAULTS; CROSS-SECTIONAL TEM; MIXED DISLOCATION; PARTIAL DISLOCATIONS; PRISMATIC STACKING FAULTS; SEMI CONDUCTING III-V MATERIALS; SYSTEMATIC IDENTIFICATION; THREADING DISLOCATION;

SCREW DISLOCATIONS;

EID: 84855552770 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.10.086 Document Type: Article

Times cited : (29)

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