Influence of anisotropic strain on excitonic transitions in a-plane GaN films

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 322-324

  Buchheim, C ^a   Roppischer M ^b   Goldhahn, R ^a   Gobsch, G ^a   Cobet, C ^b   Werner, C ^b   Esser, N ^b   Dadgar, A ^c   Wieneke, M ^c   Blasing J ^c   Krost, A ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Anisotropy; Dielectric function; GaN

Indexed keywords

ANISOTROPY; CORUNDUM; CRYSTAL GROWTH; FUNCTIONS; GALLIUM NITRIDE; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ELLIPSOMETRY;

A PLANE; ABSORPTION EDGES; BAND-STRUCTURE CALCULATIONS; COMPLEX DIELECTRIC FUNCTIONS; DIELECTRIC FUNCTION; ENERGY RANGES; GAN; GAN FILMS; PHOTON ENERGY RANGE; PHOTOREFLECTANCE MEASUREMENTS; PLANE STRAINS; SAPPHIRE SUBSTRATES; VAPOUR PHASE EPITAXY;

GALLIUM ALLOYS;

EID: 58749101715     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.035     Document Type: Article

References (12)

1. Winzer A.T., Gobsch G., Goldhahn R., Fuhrmann D., Hangleiter A., Dadgar A., and Krost A. Phys. Rev. B 74 (2006) 125207
2. Koida T., Chichibu S.F., Sota T., Craven M.D., Haskell B.A., Speck J.S., DenBaars S.P., and Nakamura S. Appl. Phys. Lett. 84 (2004) 3768
3. Misra P., Sun Y.J., Brandt O., and Grahn H.T. J. Appl. Phys. 96 (2004) 7029
4. Misra P., Brandt O., Grahn H.T., Teisseyre H., Siekacz M., Skierbiszewski C., and Łucznik B. Appl. Phys. Lett. 91 (2007) 141903
5. Misra P., Behn U., Brandt O., Grahn H.T., Imer B., Nakamura S., DenBaars S.P., and Speck J.S. Appl. Phys. Lett. 88 (2006) 161920
6. Shokhovets S., Goldhahn R., Gobsch G., Piekh S., Lantier R., Rizzi A., Lebedev V., and Richter W. J. Appl. Phys. 94 (2003) 307
7. Buchheim C., Goldhahn R., Rakel M., Cobet C., Esser N., Rossow U., Fuhrmann F., and Hangleiter A. Phys. Status Solidi B 242 (2005) 2610
8. Yan C.H., Yao H., Van Hove J.M., Wowchak A.M., Chow P.P., and Zavada J.M. J. Appl. Phys. 88 (2000) 3463
9. Cobet C., Esser N., Zettler J.T., Richter W., Waltereit P., Brandt O., Ploog K.H., Peters S., Edwards N.V., Lindquist O.P.A., and Cardona M. Phys. Rev. B 64 (2001) 165203
10. Goldhahn R. Acta Phys. Pol. A 104 (2003) 123
11. Goldhahn R., Buchheim C., Schley P., Winzer A.T., and Wenzel H. In: Piprek J. (Ed). Nitride Semiconductor Devices: Principles and Simulation (2007), Wiley, Weinheim 95
12. Ghosh S., Waltereit P., Brandt O., Grahn H.T., and Ploog K.H. Phys. Rev. B 65 (2002) 075202