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Volumn 248, Issue 3, 2011, Pages 578-582

Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?

Author keywords

Doping; GaN; Heteroepitaxial growth; Stacking faults

Indexed keywords


EID: 79951763903     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201046372     Document Type: Article
Times cited : (18)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.