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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 4, 2013, Pages

Electrical characteristics of ZrO2/GaAs MOS capacitor fabricated by atomic layer deposition

(5) Konda, R B a White, C a Thomas, D a Yang, Q a Pradhan, A K a

a NORFOLK STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; FREQUENCY DISPERSION; GATE DIELECTRIC STACKS; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; TEMPERATURE REGIONS;

ANNEALING; ATOMIC LAYER DEPOSITION; CHARGE COUPLED DEVICES; DEPOSITION; DIELECTRIC FILMS; DISPERSIONS; FABRICATION; GALLIUM ARSENIDE; GATE DIELECTRICS; GROWTH TEMPERATURE; MOS CAPACITORS; SEMICONDUCTING GALLIUM;

ZIRCONIUM ALLOYS;

EID: 84880174982 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.4807732 Document Type: Article

Times cited : (20)

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