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Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

Al 2O 3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

(6) Wu, Jun a Lind, E a Timm, R a Hjort, Martin a Mikkelsen, A a Wernersson, L E a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AL OXIDE; ANNEALING PROCEDURES; BORDER TRAPS; CAPACITANCE VOLTAGE; CONDUCTION BAND EDGE; FREQUENCY DISPERSION; HIGH-K OXIDES; INAS; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; PROCESSING CONDITION; STRUCTURAL QUALITIES; X RAY PHOTOEMISSION SPECTROSCOPY;

CAPACITORS; DIELECTRIC DEVICES; PHOTOELECTRON SPECTROSCOPY;

INDIUM ARSENIDE;

EID: 84859527586 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3698094 Document Type: Article

Times cited : (43)

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