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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

Effect of pulsed deposition of Al 2O 3 for native oxides reduction of GaAs by atomic layer deposition technique

(7) Konda, R B a Mundle, R a Bamiduro, O a Dondapati, H a Bahoura, M a Pradhan, A K a Donley, C b

a NORFOLK STATE UNIVERSITY (United States)

b UNIVERSITY OF NORTH CAROLINA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; GAAS; GAAS SUBSTRATES; GAAS SURFACES; GAAS WAFER; METAL PRECURSOR; NATIVE OXIDES; POTENTIAL APPLICATIONS; PRE-DEPOSITION; PULSED DEPOSITION; SELF-CLEANING MECHANISM; SELF-CLEANING PROCESS; TRIMETHYL ALUMINUMS; X-RAY PHOTOELECTRONS;

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; GALLIUM ARSENIDE; METAL CLEANING; PHOTONS; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CLEANING;

EID: 84855580495 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3662862 Document Type: Article

Times cited : (8)

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