SCOPUS 정보 검색 플랫폼

Volumn 18, Issue 6, 2012, Pages 1055-1060

Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition

(5) Woo, Chang Ho a Ahn, Cheol Hyoun a Kwon, Yong Hun a Han, Jae Hee b Cho, Hyung Koun a

a Sungkyunkwan University (South Korea)

b Gachon University (South Korea)

Author keywords

amorphous materials; dielectrics; oxides; semconductors; thin films

Indexed keywords

ALUMINA; ALUMINUM COATINGS; ALUMINUM OXIDE; AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; FLEXIBLE ELECTRONICS; GALLIUM COMPOUNDS; GATES (TRANSISTOR); INDIUM COMPOUNDS; OXIDES; PROCESSING; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS; WET ETCHING; ZINC COMPOUNDS;

ATOMICALLY FLAT SURFACE; ELECTRICAL PERFORMANCE; FABRICATION METHOD; HIGH FIELD EFFECT MOBILITY; OXIDE THIN-FILM TRANSISTORS; OXIDE THINFILM TRANSISTORS (TFTS); PROCESSING TEMPERATURE; SEMCONDUCTORS;

THIN FILM TRANSISTORS;

EID: 84879644742 PISSN: 15989623 EISSN: 20054149 Source Type: Journal
DOI: 10.1007/s12540-012-6020-5 Document Type: Article

Times cited : (12)

References (32)

1
- 77649184504
- 10.1109/LED.2009.2038805 1:CAS:528:DC%2BC3cXjsFersLw%3D
- K. S. Son, J. S. Jung, K. H. Lee, T. S. Kim, J. S. Park, Y. H. Choi, K. C. Park, J. Y. Kwon, B. W. Koo, and S. Y. Lee, IEEE. Electron Device Lett. 31, 219 (2010).
- (2010) IEEE. Electron Device Lett. , vol.31 , pp. 219
- Son, K.S.¹ Jung, J.S.² Lee, K.H.³ Kim, T.S.⁴ Park, J.S.⁵ Choi, Y.H.⁶ Park, K.C.⁷ Kwon, J.Y.⁸ Koo, B.W.⁹ Lee, S.Y.¹⁰

2
- 67650483313
- 10.1063/1.3159832
- J.-S. Park, T.-W. Kim, D. Stryakhilev, J.-S. Lee, S.-G. An, Y.-S. Pyo, D.-B. Lee, Y. G. Mo, D.-U. Jin, and H. K. Chung, Appl. Phys. Lett. 95, 013503 (2009).
- (2009) Appl. Phys. Lett. , vol.95 , pp. 013503
- Park, J.-S.¹ Kim, T.-W.² Stryakhilev, D.³ Lee, J.-S.⁴ An, S.-G.⁵ Pyo, Y.-S.⁶ Lee, D.-B.⁷ Mo, Y.G.⁸ Jin, D.-U.⁹ Chung, H.K.¹⁰

3
- 70350582950
- 10.1088/0957-4484/20/46/465201
- C. Yang, K. Hong, J. Jang, D. S. Chung, T. K. An, W.-S. Choi, and C. E. Park, Nanotchnology 20, 465201 (2009).
- (2009) Nanotchnology , vol.20 , pp. 465201
- Yang, C.¹ Hong, K.² Jang, J.³ Chung, D.S.⁴ An, T.K.⁵ Choi, W.-S.⁶ Park, C.E.⁷

4
- 9744248669
- 10.1038/nature03090 1:CAS:528:DC%2BD2cXhtVWitbjF
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488 (2004).
- (2004) Nature , vol.432 , pp. 488
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

5
- 33744460748
- 10.1143/JJAP.45.4303 1:CAS:528:DC%2BD28XlvFeqsbg%3D
- K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Jap. J. Appl. Phys. 45, 4303 (2006).
- (2006) Jap. J. Appl. Phys. , vol.45 , pp. 4303
- Nomura, K.¹ Takagi, A.² Kamiya, T.³ Ohta, H.⁴ Hirano, M.⁵ Hosono, H.⁶

6
- 39749191514
- 10.1063/1.2838380
- J. S. Park, J. K. Jeong, H. J. Chung, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 92, 072104 (2008).
- (2008) Appl. Phys. Lett. , vol.92 , pp. 072104
- Park, J.S.¹ Jeong, J.K.² Chung, H.J.³ Mo, Y.G.⁴ Kim, H.D.⁵

7
- 33748795083
- 10.1063/1.2353811
- H. Yabuta, M. Sano, K. Abe, I. Aiba, T. Den, and H. Kumomi, Appl. Phys. Lett. 89, 112123 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 112123
- Yabuta, H.¹ Sano, M.² Abe, K.³ Aiba, I.⁴ Den, T.⁵ Kumomi, H.⁶

8
- 34548684568
- 10.1063/1.2783961
- J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 91, 113505 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 113505
- Jeong, J.K.¹ Jeong, J.H.² Yang, H.W.³ Park, J.S.⁴ Mo, Y.G.⁵ Kim, H.D.⁶

9
- 50649114009
- 1:CAS:528:DC%2BD1cXhtFGht7%2FI
- B. Bayraktaroglu, K. Leedy, and R. Neidhard, IEEE. 29, 1024 (2008).
- (2008) IEEE. , vol.29 , pp. 1024
- Bayraktaroglu, B.¹ Leedy, K.² Neidhard, R.³

10
- 77649286518
- 10.1016/j.tsf.2009.09.165 1:CAS:528:DC%2BC3cXivVOmtr8%3D
- S. Y. Lee, S. P. Chang, and J. S. Lee, Thin Solid Films 518, 3030 (2010).
- (2010) Thin Solid Films , vol.518 , pp. 3030
- Lee, S.Y.¹ Chang, S.P.² Lee, J.S.³

11
- 70350104993
- 10.1063/1.3226853
- J.-Y. Cheng, C.-T. Huang, and J.-G. Hwu, J. Appl. Phys. 106, 074507 (2009).
- (2009) J. Appl. Phys. , vol.106 , pp. 074507
- Cheng, J.-Y.¹ Huang, C.-T.² Hwu, J.-G.³

12
- 26844571467
- 10.1002/adma.200501109 1:CAS:528:DC%2BD2MXhtFCgsbbO
- T. B. Singh, F. Meghdadi, S. Gunes, N. Marjanovic, G. Horowitz, P. Lang, S. Bauer, and N. S. Sariciftci, Adv. Mater. 17, 2315 (2005).
- (2005) Adv. Mater. , vol.17 , pp. 2315
- Singh, T.B.¹ Meghdadi, F.² Gunes, S.³ Marjanovic, N.⁴ Horowitz, G.⁵ Lang, P.⁶ Bauer, S.⁷ Sariciftci, N.S.⁸

13
- 17944367960
- 10.1063/1.1880434
- M. J. Panzer, C. R. Newman, and C. D. Frisbie, Appl. Phys. Lett. 86, 103503 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 103503
- Panzer, M.J.¹ Newman, C.R.² Frisbie, C.D.³

14
- 77950405797
- 10.3365/KJMM.2010.48.03.256 1:CAS:528:DC%2BC3cXmtV2ntb8%3D
- Y. S. Ahn, M. Y. Huh, H. Y. Huh, H. Y. Kang, and H. C. Sohn, Korean J. Met. Mater. 48, 256 (2010).
- (2010) Korean J. Met. Mater. , vol.48 , pp. 256
- Ahn, Y.S.¹ Huh, M.Y.² Huh, H.Y.³ Kang, H.Y.⁴ Sohn, H.C.⁵

15
- 43049157966
- 10.1016/j.ssc.2008.03.036 1:CAS:528:DC%2BD1cXlslSjsro%3D
- L. Zhang, H. Zhang, Y. Bai, J. W. Ma, J. Cao, X. Y. Jiang, and Z. L. Zhang, Solid State Comm. 146, 387 (2008).
- (2008) Solid State Comm. , vol.146 , pp. 387
- Zhang, L.¹ Zhang, H.² Bai, Y.³ Ma, J.W.⁴ Cao, J.⁵ Jiang, X.Y.⁶ Zhang, Z.L.⁷

16
- 67649216565
- 10.1016/j.orgel.2009.05.005 1:CAS:528:DC%2BD1MXnvVags7s%3D
- D. J. Yun, S. H. Lim, T. W. Lee, and S. W. Rhee, Org. Electron. 10, 970 (2009).
- (2009) Org. Electron. , vol.10 , pp. 970
- Yun, D.J.¹ Lim, S.H.² Lee, T.W.³ Rhee, S.W.⁴

17
- 77950593384
- 10.1016/j.orgel.2010.01.026 1:CAS:528:DC%2BC3cXkvVamtr4%3D
- W. Xu and S. W. Rhee, Org. Electron. 11, 836 (2010).
- (2010) Org. Electron. , vol.11 , pp. 836
- Xu, W.¹ Rhee, S.W.²

18
- 77953012546
- 10.1143/JJAP.49.05EA01
- M. Hasan, J. H. Rho, S. Y. Kang, and J. H. Ahn, Jap. J. Appl. Phys. 49, 05EA01 (2010).
- (2010) Jap. J. Appl. Phys. , vol.49
- Hasan, M.¹ Rho, J.H.² Kang, S.Y.³ Ahn, J.H.⁴

19
- 33745216462
- 10.1063/1.2213196
- C. S. Kim, S. J. Jo, S. W. Lee, W. J. Kim, and H. K. Baik, Appl. Phys. Lett. 88, 243515 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 243515
- Kim, C.S.¹ Jo, S.J.² Lee, S.W.³ Kim, W.J.⁴ Baik, H.K.⁵

20
- 68849122985
- 10.1088/0268-1242/24/5/055008
- J. M. Lee, B. H. Choi, M. J. Ji, J. H. Park, J. H. Kwon, and B. K. Ju, Semicond. Sci. Technol. 24, 055008 (2009).
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 055008
- Lee, J.M.¹ Choi, B.H.² Ji, M.J.³ Park, J.H.⁴ Kwon, J.H.⁵ Ju, B.K.⁶

21
- 21744444606
- 10.1063/1.1940727
- R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 121301
- Puurunen, R.L.¹

22
- 76649126379
- 10.1016/j.sse.2009.10.017 1:CAS:528:DC%2BC3cXitF2ntbg%3D
- D. J. Park, J. H. Kim, and B. O. Park, Solid State Electron. 54, 323 (2010).
- (2010) Solid State Electron. , vol.54 , pp. 323
- Park, D.J.¹ Kim, J.H.² Park, B.O.³

23
- 79954543702
- 10.1063/1.3577607
- J.-M. Kim, T. Nam, S. J. Lim, Y. G. Seol. N.-E. Lee, D. Kim, and H. Kim, Appl. Phys. Lett. 98, 142113 (2011).
- (2011) Appl. Phys. Lett. , vol.98 , pp. 142113
- Kim, J.-M.¹ Nam, T.² Lim, S.J.³ Seol, Y.G.⁴ Lee, N.-E.⁵ Kim, D.⁶ Kim, H.⁷

24
- 60349091512
- 10.1002/adma.200801470 1:CAS:528:DC%2BD1MXit1Kitrg%3D
- S. K. Park, C. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. Lee, K. Lee, M. S. Oh, and S. Im, Adv. Mater. 21, 678 (2009).
- (2009) Adv. Mater. , vol.21 , pp. 678
- Park, S.K.¹ Hwang, C.² Ryu, M.³ Yang, S.⁴ Byun, C.⁵ Shin, J.⁶ Lee, J.⁷ Lee, K.⁸ Oh, M.S.⁹ Im, S.¹⁰

25
- 54949102088
- 10.1149/1.2994629 1:CAS:528:DC%2BD1cXhtlags7nI
- M. S. Oh, K. M. Lee, J. H. Song, B. H. Lee, M. M. Sung, D. K. Hwang, and S. I. Im, J. Electrochem. Soc. 155, H1009 (2008).
- (2008) J. Electrochem. Soc. , vol.155 , pp. 1009
- Oh, M.S.¹ Lee, K.M.² Song, J.H.³ Lee, B.H.⁴ Sung, M.M.⁵ Hwang, D.K.⁶ Im, S.I.⁷

26
- 69249177220
- 10.1063/1.3206917
- L. Zhang, J. Ki, X. W. Zhang, X. Y. Jiang, and Z. L. Zhang, Appl. Phys. Lett. 95, 072112 (2009).
- (2009) Appl. Phys. Lett. , vol.95 , pp. 072112
- Zhang, L.¹ Ki, J.² Zhang, X.W.³ Jiang, X.Y.⁴ Zhang, Z.L.⁵

27
- 0037245896
- 10.1063/1.1525068 1:CAS:528:DC%2BD38XpvVejs7w%3D
- D. Knipp, R. A. Street, A. Volkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
- (2003) J. Appl. Phys. , vol.93 , pp. 347
- Knipp, D.¹ Street, R.A.² Volkel, A.³ Ho, J.⁴

28
- 10844231822
- 10.1063/1.1815042 1:CAS:528:DC%2BD2cXpslCjtbk%3D
- S. Steudel and S. D. Vusser, Appl. Phys. Lett. 85, 4400 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4400
- Steudel, S.¹ Vusser, S.D.²

29
- 31144437501
- 10.1116/1.1949220 1:CAS:528:DC%2BD2MXntV2qtLk%3D
- T. Khan and D. Vasileska, J. Vac. Sci. Technol. B 23, 1782 (2005).
- (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1782
- Khan, T.¹ Vasileska, D.²

30
- 33947281578
- 1:CAS:528:DC%2BD2sXisFCrtQ%3D%3D
- C. Y. Chen, J. W. Lee, S. D. Wang, M. S. Shieh, P. H. Lee, W. C. Chen, H. Y. Lin, K. L. Yeh, and T. F. Lei, IEEE. 53, 2993 (2006).
- (2006) IEEE. , vol.53 , pp. 2993
- Chen, C.Y.¹ Lee, J.W.² Wang, S.D.³ Shieh, M.S.⁴ Lee, P.H.⁵ Chen, W.C.⁶ Lin, H.Y.⁷ Yeh, K.L.⁸ Lei, T.F.⁹

31
- 68849122985
- 10.1088/0268-1242/24/5/055008
- J. M. Lee, B. H. Choi, M. J. Ji, J. M. Park, J. H. Kan, and B. K. Ju, Semicond. Sci. Technol. 24, 055008 (2009).
- (2009) Semicond. Sci. Technol. , vol.24 , pp. 055008
- Lee, J.M.¹ Choi, B.H.² Ji, M.J.³ Park, J.M.⁴ Kan, J.H.⁵ Ju, B.K.⁶

32
- 77950593384
- 10.1016/j.orgel.2010.01.026 1:CAS:528:DC%2BC3cXkvVamtr4%3D
- W. Xu and S. W. Phee, Organic Electronics. 11, 836 (2010).
- (2010) Organic Electronics. , vol.11 , pp. 836
- Xu, W.¹ Phee, S.W.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.