Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment

Solid-State Electronics

Volumn 54, Issue 3, 2010, Pages 323-326

  Park, Dong Jin ^a   Lim, Jung Wook ^b   Park, Byung Ok ^a  

^a Kyungpook National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Flat band; Flexible display; Hysteresis; PEALD; poly Silicon; Transfer curve

Indexed keywords

ALUMINUM OXIDES; DEFECT PASSIVATION; FLAT BAND; FLAT-BAND VOLTAGE; FLEXIBLE DISPLAY; GATE OXIDE; HIGH QUALITY; IN-SITU; INTERFACIAL OXIDE LAYERS; LOW TEMPERATURE POLY-SILICON; LOW TEMPERATURE POLYCRYSTALLINE SILICON; PLASMA POWER; PLASMA TREATMENT; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PLASTIC SUBSTRATES; POST ANNEALING; TRANSFER CURVES;

ALUMINA; DEPOSITION; GATE DIELECTRICS; GATES (TRANSISTOR); HYSTERESIS; OXIDATION; PASSIVATION; PLASMA DEPOSITION; PLASMAS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THIN FILM TRANSISTORS;

FLEXIBLE DISPLAYS;

EID: 76649126379     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.017     Document Type: Article

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