Hysteresis-free organic field-effect transistors with high dielectric strength cross-linked polyacrylate copolymer as a gate insulator

Organic Electronics

Volumn 11, Issue 5, 2010, Pages 836-845

  Xu, Wentao ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Dielectric strength; Gate insulator; Hysteresis; Low voltage operation; Organic field effect transistor; Polyacrylate

Indexed keywords

CROSSLINKING; CURING; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES OF SOLIDS; HYSTERESIS; LEAKAGE CURRENTS; POLYACRYLATES; POWER TRANSISTORS;

DEVICE PERFORMANCE; DIELECTRIC STRENGTHS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; INVERSE SUBTHRESHOLD SLOPES; LOW VOLTAGE OPERATION; LOW-LEAKAGE CURRENT; ON/OFF CURRENT RATIO;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77950593384     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.01.026     Document Type: Article

References (46)

1. Roberts M.E., Mannsfeld S.C.B., Queraltó N., Reese C., Locklin J., Knoll W., and Bao Z. Proc. Natl. Acad. Sci. USA 105 (2008) 12134
2. Wang L., Fine D., Sharma D., Torsi L., and Dodabalapur A. Anal. Bioanal. Chem. 384 (2006) 310
3. Dimitrakopoulos C.D., and Mascaro D.J. IBM J. Res. Dev. 45 (2001) 11
4. Klauk H., Halik M., Zschieschang U., Schmid G., Radlik W., and Weber W. J. Appl. Phys. 92 (2002) 5259
5. Facchetti A., Yoon M.-H., and Marks T.J. Adv. Mater. 17 (2005) 1705
6. Gu G., and Kane M.G. Appl. Phys. Lett. 92 (2008) 053305
7. Lim S.C., Kim S.H., Koo J.B., Lee J.H., Ku C.H., Yang Y.S., and Zyung T. Appl. Phys. Lett. 90 (2007) 173512
8. Hwang D.K., Lee K., Kim J.H., Im S., Park J.H., and Kim E. Appl. Phys. Lett. 89 (2006) 093507
9. Lee C.A., Park D.-W., Jung K.-D., Kim B.-J., Kim Y.C., Lee J.D., and Park B.G. Appl. Phys. Lett. 89 (2006) 262120
10. Hwang D.K., Oh M.S., Hwang J.M., Kim J.H., and Im S. Appl. Phys. Lett. 92 (2008) 013304
11. Chua L.-L., Zaumseil J., Chang J.-F., Ou E.C.W., Ho P.K.H., Sirringhaus H., and Friend R.H. Nature 434 (2005) 194
12. Kim S.H., Yang H., Yang S.Y., Hong K., Choi D., Yang C., Chung D.S., and Park C.E. Org. Electron. 9 (2008) 673
13. Li D., Borkent E.-J., Nortrup R., Moon H., Katz H., and Bao Z. Appl. Phys. Lett. 86 (2005) 042105
14. Zhu Z.-T., Mason J.T., Dieckmann R., and Malliaras G.G. Appl. Phys. Lett. 81 (2002) 4643
15. Park S.Y., Park M., and Lee H.H. Appl. Phys. Lett. 85 (2004) 2283
16. Jung T., Dodabalapur A., Wenz R., and Mohapatra S. Appl. Phys. Lett. 87 (2005) 182109
17. Katz H.E., Hong X.M., Dodabalapu A., and Sarpeshkar R. J. Appl. Phys. 91 (2002) 1572
18. Egginger M., Irimia-Vladu M., Schwödiauer R., Tanda A., Frischauf I., Bauer S., and Sariciftci N.S. Adv. Mater. 20 (2008) 1018
19. Lee T.-W., Shin J.H., Kang I.-N., and Lee S.Y. Adv. Mater. 19 (2007) 2702
20. Jang J., Kim S.H., Nam S., Chung D.S., Yang C., Yun W.M., Park C.E., and Koo J.B. Appl. Phys. Lett. 92 (2008) 143306
21. Halik M., Klauk H., Zschieschang U., Schmid G., Dehm C., Schütz M., Maisch S., Effenberger F., Brunnbauer M., and Stellacci F. Nature 431 (2004) 963
22. Yoon M.-H., Yan H., Facchetti A., and Marks T.J. J. Am. Chem. Soc. 127 (2005) 10388
23. Acton O., Ting G., Ma H., Ka J.W., Yip H.-L., Tucker N.M., and Jen A.K.-Y. Adv. Mater. 20 (2008) 3697
24. Yang F.-Y., Chang K.-J., Hsu M.-Y., and Liu C.-C. Org. Electron. 9 (2008) 925
25. Klauk H., Zschieschang U., Pflaum J., and Halik M. Nature 445 (2007) 745
26. Yoon M.-H., Facchetti A., and Marks T.J. Proc. Natl. Acad. Sci. USA 102 (2005) 4678
27. Cho J.H., Lee J., Xia Y., Kim B., He Y., Renn M.J., Lodge T.P., and Frisbie C.D. Nat. Mater. 7 (2008) 900
28. Xu W., and Rhee S.-W. J. Mater. Chem. 19 (2009) 5250
29. Yang S.Y., Shin K., and Park C.E. Adv. Funct. Mater. 15 (2005) 1806
30. Shin K., Yang S.Y., Yang C., Jeon H., and Park C.E. Org. Electron. 8 (2007) 336
31. Bolognesi A., Berliocchi M., Manenti M., Di Carlo A., Lugli P., Lmimouni K., and Dufour C. IEEE Trans. Electron Dev. 51 (2004) 1997
32. Kim C., Facchetti A., and Marks T.J. Adv. Mater. 19 (2007) 2561
33. Kim C., Facchetti A., and Marks T.J. Science 318 (2007) 76
34. Jang Y., Kim D.H., Park Y.D., Cho J.H., Hwang M., and Cho K. Appl. Phys. Lett. 88 (2006) 072101
35. Noh Y.-Y., and Sirringhaus H. Org. Electron. 10 (2009) 174
36. Chua L.-L., Ho P.K.H., Sirringhaus H., and Friend R.H. Appl. Phys. Lett. 84 (2004) 3400
37. Choi C.G., and Bae B.-S. Org. Electron. 8 (2007) 743
38. Franssila S. Introduction to Microfabrication (2004), John Wiley & Sons Ltd., England pp. 59-60
39. A. Boogaard, R. Roesthuis, I. Brunets, A.A.I. Aarnink, A.Y. Kovalgin, J. Holleman, R.A.M. Wolters, J.Schmitz, in: Proc. 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), Veldhoven, the Netherlands, 2008, p. 452.
40. Majewski L.A., Grell M., Ogier S.D., and Veres J. Org. Electron. 4 (2003) 27
41. Majewski L.A., Schroeder R., and Grell M. J. Phys. D Appl. Phys. 37 (2004) 21
42. Schroder D.K. Semiconductor Material and Device Characterization. third ed. (2004), John Wiley & Sons, New Jersey pp. 336-338
43. Kim S.-J., So M.-S., Suh M.C., and Chung H.K. Jpn. J. Appl. Phys. 44 (2005) L1414
44. Lee S., Koo B., Shin J., Lee E., Park H., and Kim H. Appl. Phys. Lett. 84 (2006) 162109
45. Na M., and Rhee S.-W. Org. Electron. 7 (2006) 205
46. Rolland A., Richard J., Kleider J.-P., and Mencaraglia D. J. Electrochem. Soc. 140 (1993) 3679