SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 7, 2009, Pages

Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides

(3) Cheng, Jen Yuan a Huang, Chiao Ti a Hwu, Jenn Gwo a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AREA RATIOS; CAPACITANCE MODEL; CAPACITANCE VOLTAGE; COMPREHENSIVE STUDIES; CONSTANT VOLTAGE STRESS; DEEP DEPLETION; ELECTRICAL CHARACTERIZATION; GATE VOLTAGES; INTERFACIAL PROPERTY; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; OXIDE BREAKDOWN; OXIDE THICKNESS; SI SUBSTRATES; TUNNELING CURRENT; ULTRA-THIN OXIDE;

CAPACITORS; MOS CAPACITORS; SILICON COMPOUNDS; SUBSTRATES;

CAPACITANCE;

EID: 70350104993 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3226853 Document Type: Article

Times cited : (37)

References (35)

1
- 0033600230
- The electronic structure at the atomic scale of ultrathin gate oxides
- DOI 10.1038/21602
- D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) 0028-0836 399, 758 (1999). 10.1038/21602 (Pubitemid 29293166)
- (1999) Nature , vol.399 , Issue.6738 , pp. 758-761
- Muller, D.A.¹ Sorsch, T.² Moccio, S.³ Baumann, F.H.⁴ Evans-Lutterodt, K.⁵ Timp, G.⁶

2
- 26944493855
- A sound barrier for silicon?
- DOI 10.1038/nmat1466, PII N1466
- D. A. Muller, Nature Mater. 1476-1122 4, 645 (2005). 10.1038/nmat1466 (Pubitemid 43090721)
- (2005) Nature Materials , vol.4 , Issue.9 , pp. 645-647
- Muller, D.A.¹

3
- 0004005306
- (Wiley, New York).
- S. M. Sze, Physics of Semiconductor Device (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Device
- Sze, S.M.¹

4
- 0028747841
- 0018-9383,. 10.1109/16.337449
- S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 0018-9383 41, 2357 (1994). 10.1109/16.337449
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 2357
- Takagi, S.¹ Toriumi, A.² Iwase, M.³ Tango, H.⁴

5
- 41349087084
- 0003-6951,. 10.1063/1.2902295
- J. T. Ryan, P. M. Lenahan, J. Robertson, and G. Bersuker, Appl. Phys. Lett. 0003-6951 92, 123506 (2008). 10.1063/1.2902295
- (2008) Appl. Phys. Lett. , vol.92 , pp. 123506
- Ryan, J.T.¹ Lenahan, P.M.² Robertson, J.³ Bersuker, G.⁴

6
- 35548943511
- Role of interfacial layer on breakdown of TiN /high- κ gate stacks
- DOI 10.1149/1.2794883
- N. A. Chowdhury, D. Misra, G. Bersuker, C. Young, and R. Choi, J. Electrochem. Soc. 0013-4651 154, G298 (2007). 10.1149/1.2794883 (Pubitemid 350015368)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.12
- Chowdhury, N.A.¹ Misra, D.² Bersuker, G.³ Young, C.⁴ Choi, R.⁵

7
- 33751099033
- The effect of interfacial layer properties on the performance of Hf-based gate stack devices
- DOI 10.1063/1.2362905
- G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. Ryan, J. Appl. Phys. 0021-8979 100, 094108 (2006). 10.1063/1.2362905 (Pubitemid 44772613)
- (2006) Journal of Applied Physics , vol.100 , Issue.9 , pp. 094108
- Bersuker, G.¹ Park, C.S.² Barnett, J.³ Lysaght, P.S.⁴ Kirsch, P.D.⁵ Young, C.D.⁶ Choi, R.⁷ Lee, B.H.⁸ Foran, B.⁹ Van Benthem, K.¹⁰ Pennycook, S.J.¹¹ Lenahan, P.M.¹² Ryan, J.T.¹³

8
- 34249906151
- 2 gate stack
- DOI 10.1109/TED.2007.896371
- D. Heh, C. D. Young, G. A. Brown, P. Y. Hung, A. Diebold, E. M. Vogel, J. B. Bernstein, and G. Bersuker, IEEE Trans. Electron Devices 0018-9383 54, 1338 (2007). 10.1109/TED.2007.896371 (Pubitemid 46864768)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.6 , pp. 1338-1345
- Heh, D.¹ Young, C.D.² Brown, G.A.³ Hung, P.Y.⁴ Diebold, A.⁵ Vogel, E.M.⁶ Bernstein, J.B.⁷ Bersuker, G.⁸

9
- 33748108365
- Electron trap generation in high-k gate stacks by constant voltage stress
- DOI 10.1109/TDMR.2006.877865, 1673699
- C. D. Young, D. Heh, S. V. Nadkarni, C. Rino J. J. Peterson, J. Barnett, L. B. Hun, and G. Bersuker, IEEE Trans. Device Mater. Reliab. 1530-4388 6, 123 (2006). 10.1109/TDMR.2006.877865 (Pubitemid 44304117)
- (2006) IEEE Transactions on Device and Materials Reliability , vol.6 , Issue.2 , pp. 123-131
- Young, C.D.¹ Heh, D.² Nadkarni, S.V.³ Choi, R.⁴ Peterson, J.J.⁵ Barnett, J.⁶ Lee, B.H.⁷ Bersuker, G.⁸

10
- 0020833511
- 0741-3106,. 10.1109/EDL.1983.25759
- M. S. Liang, C. Chang, Y. T. Yeow, C. Hu, and R. W. Brodersen, IEEE Electron Device Lett. 0741-3106 4, 350 (1983). 10.1109/EDL.1983.25759
- (1983) IEEE Electron Device Lett. , vol.4 , pp. 350
- Liang, M.S.¹ Chang, C.² Yeow, Y.T.³ Hu, C.⁴ Brodersen, R.W.⁵

11
- 67349267761
- 0018-9383,. 10.1109/TED.2009.2019153
- C. H. Chen and J. G. Hwu, IEEE Trans. Electron Devices 0018-9383 56, 1262 (2009). 10.1109/TED.2009.2019153
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 1262
- Chen, C.H.¹ Hwu, J.G.²

12
- 0028513959
- 0018-9383,. 10.1109/16.310111
- P. P. Apte and K. C. Saraswat, IEEE Trans. Electron Devices 0018-9383 41, 1595 (1994). 10.1109/16.310111
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1595
- Apte, P.P.¹ Saraswat, K.C.²

13
- 0000143442
- 0003-6951,. 10.1063/1.108233
- D. J. DiMaria, D. Arnold, and E. Cartier, Appl. Phys. Lett. 0003-6951 61, 2329 (1992). 10.1063/1.108233
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2329
- Dimaria, D.J.¹ Arnold, D.² Cartier, E.³

14
- 0008536196
- 0018-9383,. 10.1109/16.662800
- R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Devices 0018-9383 45, 904 (1998). 10.1109/16.662800
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 904
- Degraeve, R.¹ Groeseneken, G.² Bellens, R.³ Ogier, J.L.⁴ Depas, M.⁵ Roussel, P.J.⁶ Maes, H.E.⁷

15
- 67249095674
- 0021-8979,. 10.1063/1.3120942
- C. H. Chang and J. G. Hwu, J. Appl. Phys. 0021-8979 105, 094103 (2009). 10.1063/1.3120942
- (2009) J. Appl. Phys. , vol.105 , pp. 094103
- Chang, C.H.¹ Hwu, J.G.²

16
- 34247599405
- Investigation of local charged defects within high-temperature annealed HfSiONSi O2 gate stacks by scanning capacitance spectroscopy
- DOI 10.1063/1.2717600
- Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Yasutake, and H. Watanabe, J. Appl. Phys. 0021-8979 101, 083704 (2007). 10.1063/1.2717600 (Pubitemid 46685372)
- (2007) Journal of Applied Physics , vol.101 , Issue.8 , pp. 083704
- Naitou, Y.¹ Ando, A.² Ogiso, H.³ Kamiyama, S.⁴ Nara, Y.⁵ Yasutake, K.⁶ Watanabe, H.⁷

17
- 70350131131
- Proceeding of the 2009 Fall ECS Meeting, (unpublished).
- J. Y. Cheng, C. T. Huang, and J. G. Hwu, Proceeding of the 2009 Fall ECS Meeting, 2009 (unpublished).
- (2009)
- Cheng, J.Y.¹ Huang, C.T.² Hwu, J.G.³

18
- 0036257359
- Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing
- DOI 10.1109/16.974766, PII S0018938302002125
- C. C. Ting, Y. H. Shih, and J. G. Hwu, IEEE Trans. Electron Devices 0018-9383 49, 179 (2002). 10.1109/16.974766 (Pubitemid 34504295)
- (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.1 , pp. 179-181
- Ting, C.-C.¹ Shih, Y.-H.² Hwu, J.-G.³

19
- 0032679052
- 0018-9383,. 10.1109/16.772500
- K. J. Yang and C. Hu, IEEE Trans. Electron Devices 0018-9383 46, 1500 (1999). 10.1109/16.772500
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1500
- Yang, K.J.¹ Hu, C.²

20
- 0033281224
- 0018-9383
- K. Yang, Y. C. King, and C. Hu, Dig. Tech. Pap.-Symp. VLSI Technol. 1999, 77. 0018-9383
- Dig. Tech. Pap.-Symp. VLSI Technol. , vol.1999 , pp. 77
- Yang, K.¹ King, Y.C.² Hu, C.³

21
- 0028430427
- 0018-9383,. 10.1109/16.285029
- K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices 0018-9383 41, 761 (1994). 10.1109/16.285029
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 761
- Schuegraf, K.F.¹ Hu, C.²

22
- 0003610719
- (Wiley, New York).
- E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

23
- 0016569377
- 0018-9383,. 10.1109/T-ED.1975.18270
- R. F. Pierret and D. W. Small, IEEE Trans. Electron Devices 0018-9383 22, 1051 (1975). 10.1109/T-ED.1975.18270
- (1975) IEEE Trans. Electron Devices , vol.22 , pp. 1051
- Pierret, R.F.¹ Small, D.W.²

24
- 2942601567
- 0021-8979,. 10.1063/1.1704850
- C. -Y. Liu, B. -Y. Chen, and T. -Y. Tseng, J. Appl. Phys. 0021-8979 95, 5602 (2004). 10.1063/1.1704850
- (2004) J. Appl. Phys. , vol.95 , pp. 5602
- Liu, C.-Y.¹ Chen, B.-Y.² Tseng, T.-Y.³

25
- 0006872409
- 1071-1023,. 10.1116/1.589417
- G. Lucovsky, A. Banerjee, B. Hinds, B. Claflin, K. Koh, and H. Yang, J. Vac. Sci. Technol. B 1071-1023 15, 1074 (1997). 10.1116/1.589417
- (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1074
- Lucovsky, G.¹ Banerjee, A.² Hinds, B.³ Claflin, B.⁴ Koh, K.⁵ Yang, H.⁶

26
- 10844250271
- Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current
- DOI 10.1149/1.1813653
- Y. P. Lin and J. G. Hwu, J. Electrochem. Soc. 0013-4651 151, G853 (2004). 10.1149/1.1813653 (Pubitemid 40006172)
- (2004) Journal of the Electrochemical Society , vol.151 , Issue.12
- Lin, Y.-P.¹ Hwu, J.-G.²

27
- 0034141056
- Effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
- DOI 10.1109/55.821673
- H. Yang, H. Niimi, J. W. Keister, G. Lucovsky, and J. E. Rowe, IEEE Electron Device Lett. 0741-3106 21, 76 (2000). 10.1109/55.821673 (Pubitemid 30562991)
- (2000) IEEE Electron Device Letters , vol.21 , Issue.2 , pp. 76-78
- Yang, H.¹ Niimi, H.² Keister, J.W.³ Lucovsky, G.⁴ Rowe, J.E.⁵

28
- 0029514106
- 0021-8979
- R. Degraeve, G. Groeseneken, R. Bellens, M. Depas, and H. E. Maes, Tech. Dig.-Int. Electron Devices Meet. 1995, 863. 0021-8979
- Tech. Dig.-Int. Electron Devices Meet. , vol.1995 , pp. 863
- Degraeve, R.¹ Groeseneken, G.² Bellens, R.³ Depas, M.⁴ Maes, H.E.⁵

29
- 0347563098
- 0031-9007,. 10.1103/PhysRevLett.51.1795
- B. Ricco, M. Y. Azbel, and M. H. Brodsky, Phys. Rev. Lett. 0031-9007 51, 1795 (1983). 10.1103/PhysRevLett.51.1795
- (1983) Phys. Rev. Lett. , vol.51 , pp. 1795
- Ricco, B.¹ Azbel, M.Y.² Brodsky, M.H.³

30
- 0017960299
- 2.
- DOI 10.1063/1.325096
- E. Harari, J. Appl. Phys. 0021-8979 49, 2478 (1978). 10.1063/1.325096 (Pubitemid 8612291)
- (1978) Journal of Applied Physics , vol.49 , Issue.4 , pp. 2478-2489
- Eli, H.¹

31
- 0009797753
- 0021-8979,. 10.1063/1.337204
- Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, J. Appl. Phys. 0021-8979 60, 2024 (1986). 10.1063/1.337204
- (1986) J. Appl. Phys. , vol.60 , pp. 2024
- Nissan-Cohen, Y.¹ Shappir, J.² Frohman-Bentchkowsky, D.³

32
- 49249117864
- 0018-9383,. 10.1109/TED.2008.926595
- K. Matocha, G. Dunne, S. Soloviev, and R. Beaupre, IEEE Trans. Electron Devices 0018-9383 55, 1830 (2008). 10.1109/TED.2008.926595
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 1830
- Matocha, K.¹ Dunne, G.² Soloviev, S.³ Beaupre, R.⁴

33
- 0032182485
- 0361-5235,. 10.1007/s11664-998-0149-5
- S. Soloviev, I. Khlebnikov, V. Madangarli, and T. S. Sudarshan, J. Electron. Mater. 0361-5235 27, 1124 (1998). 10.1007/s11664-998-0149-5
- (1998) J. Electron. Mater. , vol.27 , pp. 1124
- Soloviev, S.¹ Khlebnikov, I.² Madangarli, V.³ Sudarshan, T.S.⁴

34
- 36248998880
- Analysis of constitution and characteristics of lateral nonuniformity effects of MOS devices using QM-based Terman method
- DOI 10.1109/TED.2007.907103
- H. P. Lin and J. G. Hwu, IEEE Trans. Electron Devices 0018-9383 54, 3064 (2007). 10.1109/TED.2007.907103 (Pubitemid 350123891)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.11 , pp. 3064-3070
- Lin, H.-P.¹ Hwu, J.-G.²

35
- 67649541327
- 0163-1829,. 10.1103/PhysRevB.79.195326
- T. Ono, Phys. Rev. B 0163-1829 79, 195326 (2009). 10.1103/PhysRevB.79. 195326
- (2009) Phys. Rev. B , vol.79 , pp. 195326
- Ono, T.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.