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Volumn 49, Issue 5 PART 2, 2010, Pages
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Low temperature aluminum oxide gate dielectric on plastic film for flexible device application
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM OXIDES;
BENDING RADIUS;
CHANNEL LAYERS;
DEFECT SITES;
DEVICE PERFORMANCE;
ELECTRICAL PROPERTY;
ENHANCED PERFORMANCE;
FLEXIBLE DEVICE APPLICATIONS;
FORMING GAS ANNEALING;
HIGH MOBILITY;
INTERFACIAL OXIDE LAYERS;
LOW TEMPERATURES;
LOW THRESHOLD VOLTAGE;
ON CURRENTS;
ON-OFF RATIO;
PLASTIC SUBSTRATES;
STRAIN VALUES;
ALUMINUM;
ELECTRIC PROPERTIES;
FIELD EFFECT TRANSISTORS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
OXIDES;
PASSIVATION;
PROTECTIVE COATINGS;
PLASTICS;
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EID: 77953012546
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.05EA01 Document Type: Article |
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Times cited : (7)
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References (9)
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