Study on the structural stability and charge trapping properties of High-k HfO2 and HFO2/Al2O3/HfO2 stacks

Journal of Korean Institute of Metals and Materials

Volumn 48, Issue 3, 2010, Pages 256-261

  Ahn, Young Soo ^a   Huh, Min Young ^b   Kang, Hae Yoon ^b   Sohn, Hyunchul ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Deposition; Electrical properties; Flash memory; Semiconductors; TEM

Indexed keywords

EID: 77950405797     PISSN: 17388228     EISSN: None     Source Type: Journal    
DOI: 10.3365/KJMM.2010.48.03.256     Document Type: Article

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