Characteristics of double-gate gainzno thin-film transistor

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 219-221

  Son, Kyoung Seok ^a   Jung, Ji Sim ^a   Lee, Kwang Hee ^a   Kim, Tae Sang ^a   Park, Joon Seok ^a   Choi, Yun Hyuk ^a   Park, Keechan ^b   Kwon, Jang Yeon ^a   Koo, Bonwon ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

Double gate; Ga In Zn O (GIZO); Oxide semiconductor; Thin film transistor (TFT); Threshold voltage

Indexed keywords

DIGITAL CIRCUITRY; DOUBLE GATE; DOUBLE-GATE STRUCTURES; ENHANCEMENT-MODE; GAINZNO; GATE ELECTRODES; GATE STRUCTURE; LOW POWER; SATURATION MOBILITY; SUBTHRESHOLD SWING;

SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE; ZINC;

THIN FILM TRANSISTORS;

EID: 77649184504     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2038805     Document Type: Article

References (17)

1. H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "Amorphous oxide channel TFTs," Thin Solid Films, vol.516, no.7, pp. 1516-1522, Feb. 2008.
2. S. H. K. Park, C. S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. I. Lee, K. Lee, M. S. Oh, and S. Im, "Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel," Adv. Mater., vol.21, no.6, pp. 672-682, Feb. 2009.
3. J. Lee, D. Kim, D. Yang, S. Hong, K. Yoon, P. Hong, C. Jeong, H. Park, S. Y. Kim, S. K. Kim, S. S. Kim, K. Son, T. Kim, J. Kwon, and S. Lee, "World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT," in Proc. Soc. Inf. Display Int. Symp. Dig. Tech. Papers, 2009, pp. 625-628.
4. J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, K. C. Park, S. Y. Lee, and J. M. Kim, "Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display," IEEE Electron Device Lett., vol.29, no.12, pp. 1309-1311, Dec. 2008.
5. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol.432, no.7016, pp. 488-492, Nov. 2004.
6. J. F. Wager, "Invited paper: Amorphous oxide semiconductor thin-film transistors: Performance and manufacturability for display applications," in Proc. Soc. Inf. Display Int. Symp. Dig. Tech. Papers, 2009, pp. 181-183.
7. D. H. Cho, S. H. Yang, C. W. Byun, M. K. Ryu, S. H. K. Park, C. S. Hwang, S. M. Yoon, and H. Y. Chu, "Transparent oxide thin-film transistors composed on Al and Sn-doped zinc indium oxide," IEEE Electron Device Lett., vol.30, no.1, pp. 48-50, Jan. 2008.
8. J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, "Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors," Appl. Phys. Lett., vol.93, no.12, p. 123 508, Sep. 2008.
9. K. S. Son, T. S. Kim, J. S. Jung, M. K. Ryu, K. B. Park, B. W. Yoo, K. C. Park, J. Y. Kwon, S. Y. Lee, and J. M. Kim, "Threshold voltage control of amorphous gallium indium zinc oxide TFTs by suppressing back-channel current," Electrochem. Solid-State Lett., vol.12, no.1, pp. H26-H28, 2009.
10. T. Iwasaki, N. Itagaki, T. Den, H. Kumoni, K. Nomura, T. Kamiya, and H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system," Appl. Phys. Lett., vol.90, no.24, p. 242 114, Jun. 2007.
11. K. Hoshino, D. Hong, H. Q. Chiang, and J. F. Wager, "Constant- voltage-bias stress testing of a-IGZO thin-film transistors," IEEE Trans. Electron Devices, vol.56, no.7, pp. 1365-1370, Jul. 2009.
12. R. L. Hoffman, "Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors," Solid State Electron., vol.50, no.5, pp. 784-787, May 2006.
13. A. Suresh and J. F. Muth, "Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors," Appl. Phys. Lett., vol.92, no.3, p. 033 502, Jan. 2008.
14. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, "Amorphous oxide semiconductors for high-performance flexible thin-film transistors," Jpn. J. Appl. Phys., vol. 45, no. 5B, pp. 4303-4308, 2006.
15. C. H. Wann, K. Noda, T. Tanaka, M. Yoshida, and C. Hu, "A comparative study of advanced MOSFET concepts," IEEE Trans. Electron Devices, vol.43, no.10, pp. 1742-1753, Oct. 1996.
16. S. Zhang, R. Han, J. K. O. Sin, and M. Chan, "A novel self-aligned double-gate TFT technology," IEEE Electron Device Lett., vol.22, no.11, pp. 530-532, Nov. 2001.
17. H. S. P. Wong, D. J. Frank, P. M. Solomon, C. H. J. Wann, and J. J. Welser, "Nanoscale CMOS," Proc. IEEE, vol.87, no.4, pp. 537-569, Apr. 1999.