The improved performance of a transparent ZnO thin-film transistor with AlN/Al2O3 double gate dielectrics

Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

  Lee, Jung Min ^a,b   Choi, Byung Hyun ^a   Ji, Mi Jung ^a   Park, Jung Ho ^a,b   Kwon, Jae Hong ^b   Ju, Byeong Kwon ^b  

^a Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; CHANNEL LAYERS; CHARGE TRAP; DEVICE CHARACTERISTICS; DOUBLE GATE; FIELD-EFFECT MOBILITIES; GATE-LEAKAGE CURRENT; LARGE BAND; LATTICE MATCH; OFF CURRENT; SUBTHRESHOLD; TRANSFER CHARACTERISTICS; TRANSPARENT TFTS; ZNO; ZNO FILMS;

ELECTRIC POTENTIAL; FLAT PANEL DISPLAYS; GATES (TRANSISTOR); MOS CAPACITORS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC OXIDE;

GATE DIELECTRICS;

EID: 68849122985     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/5/055008     Document Type: Article

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