Atomic layer deposition ZnO:N flexible thin film transistors and the effects of bending on device properties

Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

  Kim, Jae Min ^a   Nam, Taewook ^a   Lim, S J ^b   Seol, Y G ^c   Lee, N E ^c   Kim, Doyoung ^a   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PROPERTIES; ELECTRICAL PROPERTY; FLEXIBLE DEVICE; POLYETHYLENE NAPHTHALATE; SATURATION MOBILITY; SINGLE CRYSTAL NANOWIRES; SUBSTRATE BENDING; ZNO;

ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; NANOWIRES; SINGLE CRYSTALS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 79954543702     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3577607     Document Type: Article

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