Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n- GaAs Schottky barrier diodes (SBDs)

Sensors and Actuators, A: Physical

Volumn 199, Issue , 2013, Pages 194-201

  Tecimer, H ^a   Turut A ^b   Uslu, H ^c   Altindal, S ^a   Uslu, I ^a  

^a GAZI UNIVERSITY   (Turkey)

^b ISTANBUL MEDENIYET UNIVERSITY   (Turkey)

^c KARABUK UNIVERSITY   (Turkey)

Author keywords

Au (Zn doped)PVA n GaAs SBDs; Barrier height; I V T characteristics; Inhomogeneous barrier; TFE and FE mechanisms

Indexed keywords

BARRIER HEIGHTS; I-V-T CHARACTERISTICS; INCREASING TEMPERATURES; INHOMOGENEOUS BARRIER; SCHOTTKY BARRIER DIODES (SBDS); TEMPERATURE DEPENDENT; THERMIONIC FIELD EMISSION; ZN-DOPED;

ENERGY GAP; FIELD EMISSION; NEGATIVE TEMPERATURE COEFFICIENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; TEMPERATURE; THERMIONIC EMISSION; ZINC;

GALLIUM ARSENIDE;

EID: 84879522021     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2013.05.027     Document Type: Article

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