Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range

Current Applied Physics

Volumn 10, Issue 4, 2010, Pages 1188-1195

  Demirezen, S ^a   Altindal, Ş ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; Current transport mechanisms; Double Gaussian distribution; Series resistance

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CURRENT-TRANSPORT MECHANISMS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; IDEALITY FACTORS; INHOMOGENEITIES; LINEAR REGION; RICHARDSON CONSTANT; RICHARDSON PLOT; SERIES RESISTANCES; STANDARD DEVIATION; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THEORETICAL VALUES; TRANSPORT MECHANISM; ZERO-BIAS;

GALLIUM; GAUSSIAN DISTRIBUTION; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 77951252271     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.02.008     Document Type: Article

References (48)

1. Sheu J.K., Su Y.K., Chi G.C., Jou M.J., and Chang C.M. Appl. Phys. Lett. 72 (1998) 3317
2. Auret F.D., Goodman S.D., Koschnick F.K., Spaeth J.M., Beaumont B., and Gibart P. Appl. Phys. Lett. 74 (1999) 2173
3. Su Y.K., Juang F.S., and Chen M.H. Jpn. J. Appl. Phys. 142 (2003) 2257
4. Lisesivdin S.B., Demirezen S., Cali{dotless}şkan M.D., Yi{dotless}ldi{dotless}z A., Kasap M., Özçelik S., and Özbay E. Semicond. Sci. Technol. 23 (2008) 095008
5. Wang Y.J., Kaplan R., Ng H.K., Doverspike K., Gaskill D.K., Ikedo T., Akasaki I., and Amono H. J. Appl. Phys. 79 (1996) 8007
6. Pearton S. Mater. Sci. Eng. B 82 (2001) 227
7. Song J., Lu W., Flynn J.S., and Brandes G.R. Solid-State Electron. 49 (2005) 1330
8. Sawada T., Izumi Y., Kimura N., Suzuki K., Imai K., Kim S.W., and Suzuki T. Appl. Surf. Sci. 216 (2003) 192
9. Monroy E., Calle F., Ranchal R., Palacios T., Verdu M., Sanchez F.J., Montojo M.T., Eickhoff M., Omnes F., Bougrioua Z., and Moerman I. Semicond. Sci. Technol. 17 (2002) L47-L54
10. Kim H., Schuette M., Jung H., Song J., Lee J., Lu W., and Mabon J.C. Appl. Phys. Lett. 89 (2006) 053516
11. Chattopadhyay P., and Raychaudhuri B. Solid State Electron. 35 (1993) 605
12. Chand S., and Kumar J. Semicond. Sci. Technol. 11 (1996) 1203
13. Chand S., and Kumar J. Appl. Phys. A 65 (1997) 497
14. Zhu S., Van Meirhaeghe R.L., Detavernier C., Ru G.P., Li B.Z., and Cardon F. Solid-State Commun. 112 (1999) 611
15. Karataş S., Alti{dotless}ndal S., Türüt A., and Özmen A. Appl. Surf. Sci. 217 (2003) 250
16. Tataroǧlu A., Alti{dotless}ndal S., and Bülbül M.M. Microelectr. Eng. 81 (2005) 140
17. Zeyrek S., Alti{dotless}ndal S., Yüzer H., and Bülbül M.M. Appl. Surf. Sci. 252 (2006) 2999
18. Dökme I., and Alti{dotless}ndal S. Semicond. Sci. Technol. 21 (2006) 1053
19. Doǧan S., Duman S., Gürbulak B., Tüzemen S., and Morkoç H. Physica E 41 (2009) 646
20. Ravinandan M., Koteswara Rao P., and Rajagopal Reddy V. Semicond. Sci. Technol. 24 (2009) 035004
21. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Willey, New York
22. Chand S., and Kumar J. J. Appl. Phys. 80 (1996) 288
23. McCafferty P.G., Sellai A., Dawson P., and Elabd H. Solid State Electron. 39 (1996) 583
24. Zhu S.R., Van Meirhaeghe L., Detavernier C., Cardon F., Ru G.P., Qu X.P., and Li B.Z. Solid State Electron. 44 (2000) 663
25. Duman S., Gürbulak B., and Turut A. Appl. Surf. Sci. 253 (2007) 3899
26. Cheung S.K., and Cheung N.W. Appl. Phys. Lett. 49 (1986) 85
27. Hefner A.R., Singh R., Lai J., Berning D.W., Bouche S., and Chapuy C. IEEE Trans. Power Electron. 16 (2001) 273
28. Chattopadhyay P., and Haldar D.P. Appl. Surf. Sci. 143 (1999) 287
29. Tung R.T. Phys. Rev. B 45 (1992) 13509
30. Sullivan J.P., Tung R.T., Pinto M.R., and Graham W.R. J. Appl. Phys. 70 (1991) 7403
31. Kampen T.U., Park S., and Zahn D.R.T. Appl. Surf. Sci. 190 (2002) 461
32. Rhoderick H. Metal-Semiconductor Contacts (1978), Oxford University Press, New York
33. Kang W.P., Davidson J.L., Gurbuz Y., and Kerns D.V. J. Appl. Phys. 78 (1995) 1101
34. Rhoderick E.H., and Williams R.H. Metal Semiconductor Contacts. second ed. (1988), Clarendon Press, Oxford
35. Osvald J., and Horvath Zs.J. Appl. Surf. Sci. 234 (2004) 349
36. Osvald J. Solid State Commun. 138 (2006) 39
37. Horvath Zs.J., Dozsa L., Krafcsik O.H., Mohacsy T., and Vida Gy. Appl. Surf. Sci. 23 (2004) 67
38. Alti{dotless}ndal S., Kanbur H., Yi{dotless}ldi{dotless}z D.E., and Parlak M. Appl. Surf. Sci. 253 (2007) 5056
39. Padovani F.A., and Summer G. Appl. Phys. A 36 (1965) 3744
40. Horvarth Zs.J. Solid-State Electron. 39 (1996) 176
41. Cvikl B., Korosak D., and Horvath Zs.J. Vacuum 50 (1998) 385
42. Werner J.H., and Gu{combining double acute accent}ttler H.H. J. Appl. Phys. 69 (1991) 1522
43. Schmitsdorf R.F., Kampen T.U., and Mönch W. Surf. Sci. 324 (1995) 349
44. Rhoderick E.H. J. Appl. Phys. 46 (1975) 2809
45. Chand S., and Bala S. Appl. Surf. Sci. 252 (2005) 358
46. Özdemir A.F., Türüt A., and Kökçe A. Semicond. Sci. Technol. 21 (2006) 298
47. Biber M., Cakar M., and Türüt A. J. Mater. Sci - Mater. Electron. 12 (2001) 575
48. Roberts A.R.V., and Evans D.A. Appl. Phys. Lett. 86 (2005) 072105