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Journal of Alloys and Compounds

Volumn 506, Issue 1, 2010, Pages 418-422

Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model

(2) Soylu, Murat a Yakuphanoglu, Fahrettin b

a BINGOL UNIVERSITY (Turkey)

b FIRAT UNIVERSITY (Turkey)

Author keywords

Barrier inhomogeneities; GaAs; Gaussian distribution; I V measurements; Schottky diode

Indexed keywords

BARRIER INHOMOGENEITIES; GAAS; GAUSSIANS; I-V MEASUREMENTS; SCHOTTKY DIODES;

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GAUSSIAN DISTRIBUTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES;

SCHOTTKY BARRIER DIODES;

EID: 77956095001 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.07.019 Document Type: Article

Times cited : (53)

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