Gaussian distribution of inhomogeneous barrier height in Al0.24Ga0.76As/GaAs structures

Physica B: Condensed Matter

Volumn 396, Issue 1-2, 2007, Pages 22-28

  Bengi, A ^a   Altindal, S ^a   Ozcelik S ^a   Mammadov, T S ^a,b  

^a GAZI UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

Barrier height inhomogeneity; Ideality factor; Insulator layer; Interface states

Indexed keywords

BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR METAL BOUNDARIES;

IDEALITY FACTOR; INTERFACE STATES; METAL SEMICONDUCTOR INTERFACES; RICHARDSON CONSTANT; STANDARD DEVIATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34249340452     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.02.096     Document Type: Article

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