Schottky diode properties of CuInSe 2 films prepared by a two-step growth technique

Sensors and Actuators, A: Physical

Volumn 185, Issue , 2012, Pages 73-81

  Tecimer, H ^a   Aksu, S ^b   Uslu, H ^c   Atasoy, Y ^d   Bacaksiz, E ^d   Altindal, S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b SoloPower Inc   (United States)

^c KARABUK UNIVERSITY   (Turkey)

^d KARADENIZ TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Al p CuInSe 2 Mo structures; I V characteristics; Temperature effects; X ray diffraction

Indexed keywords

AL-METAL; BACK CONTACT; BARRIER HEIGHT INHOMOGENEITY; BARRIER HEIGHTS; COATED GLASS SUBSTRATES; FORWARD BIAS; HALL EFFECT MEASUREMENT; IDEALITY FACTORS; IV CHARACTERISTICS; OPTICAL BEHAVIOR; OPTICAL STUDY; PREFERENTIAL ORIENTATION; REVERSE BIAS; RICHARDSON CONSTANT; SCHOTTKY DIODES; SERIES RESISTANCES; TEMPERATURE RANGE; THERMAL EVAPORATION METHOD; THERMIONIC EMISSION THEORY; TWO-STEP GROWTH TECHNIQUE; UPPER SURFACE; X-RAY DIFFRACTION STUDIES; ZERO BIAS;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ENERGY DISPERSIVE SPECTROSCOPY; FACTOR ANALYSIS; MOLYBDENUM; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SUBSTRATES; THERMAL EFFECTS; THERMAL EVAPORATION; THERMIONIC EMISSION; X RAY DIFFRACTION;

COPPER COMPOUNDS;

EID: 84865612784     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2012.07.021     Document Type: Article

References (63)

1. S. Leppavuori, A.E. Hill, J. Levoska, E. Ahmed, R.D. Pilkington, and R.D. Tomlinson Copper indium diselenide single-crystal and thin-film infrared sensors Sensors and Actuators A 47 1995 395
2. 2 thin films produced by thermal annealing of stacked elemental layers Solar Energy Materials and Solar Cells 27 1992 13
3. 2 thin film preparation through a new selenisation process using chemical bath deposited selenium Solar Energy Materials and Solar Cells 79 2003 67
4. 2 thin films by thermal and chemical treatments Solar Energy Materials and Solar Cells 43 1996 47
5. I. Repins, M. Contreras, M. Romero, Y. Yan, W. Metzger, J. Li, S. Johnston, B. Egaas, C. DeHart, J. Scharf, B.E. McCandless, and R. Noufi Characterization of 19.9%-efficient CIGS absorbers 33rd IEEE Photovoltaic Specialists Conference San Diego, California, May 11-16 2008
6. 2 thin-film solar cells beyond 20% Progress in Photovoltaics: Research and Applications 19 2011 894
7. 2 absorbers by selenization and sulfurization Solar Energy Materials and Solar Cells 93 2009 1318
8. 2 chalcopyrite semiconductor Physical Review B 57 1998 9642
9. 2 Solar Cells 16 1986 289
10. 2 Physical Review B 69 2004 045210
11. 2 Applied Physics Letters 45 1984 668
12. 2-Au Schottky diodes Journal of Applied Physics 52 5857 1981
13. 2 single crystals Solar Cells 28 1990 301
14. 2 thin film junction, NASA/TM, 97-206322.
15. 2 single crystals grown by the horizontal Bridgman method with controlling Se vapor pressure Journal of Physics and Chemistry of Solids 64 2003 1825
16. 2 structures Inorganic Materials 39 2003 103
17. 2 Schottky diodes Technical Physics Letters 32 2006 459
18. 2 junctions Technical Physics Letters 30 2004 402
19. 2 metal-semiconductor contacts Journal of Applied Physics 68 1990 156
20. 2 thin films and its Schottky interface Journal of Nano- and Electronic Physics 3 1086 2011
21. 2 compounds, 3rd international conference on ternary compounds, Edinburgh IOP Conference Series 35 1977 229
22. 2/Al Schottky devices Physical Status Solidi A 94 1986 K153
23. J.P. Sulvian, R.T. Tung, M.R. Pinto, and W.R. Graham Electron transport of inhomogeneous Schottky barriers: a numerical study Journal of Applied Physics 70 1991 7403
24. 2 thin films by a sequential processes of evaporations and selenization Journal of Materials Science 34 1999 4579
25. 2 thin films with a 〈1 1 2〉 fiber texture Thin Solid Films 517 2009 2851
26. M.A. Martinez, and C. Guillén Comparison between large area DC-magnetron sputtered and e-beam evaporated Molybdenum as thin film electrical contacts Proceedings of the International Conference on Advances in Materials and Processing Technologies Leganés, Madrid, Spain, September 18-21 2001 1965
27. 2 thin films Applied Surface Science 257 2011 5731
28. E. Bacaksiz, B.M. Basol, M. Altunba, S. Yilmaz, M. Tomakin, and B. Abay Effect of substrate temperature and post-deposition annealing on the properties of evaporated CdSe thin films Physica Status Solidi (b) 244 2007 497
29. 2 films Semiconductors 31 1997 882
30. 2 thin films Solar Energy Materials and Solar Cells 58 1999 349
31. N.M. Shah, J.R. Ray, K.J. Patel, V.A. Kheraj, M.S. Desai, C.J. Panchal, and B. Rehani Structural, electrical, and optical properties of copper indium diselenide thin film prepared by thermal evaporation method Thin Solid Films 517 2009 3639
32. D. Donoval, M. Barus, and M. Zdimal Analysis of I-V measurements on PtSi-Si Schottky structures in a wide temperature range Solid-State Electronics 34 1991 1365
33. S.M. Sze Physics of Semiconductor Devices 2nd ed. 1981 Wiley-Interscience New York
34. B. Abay, G. ankaya, H.S. Güder, H. Efeolu, and Y.K. Yourtu Barrier characteristics of Cd/p-GaTe Schottky diodes based on I-V-T measurements Semiconductor Science and Technology 18 2003 75
35. F. Yakuphanolu, M. Kandaz, and B.F. enkal Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite Sensors and Actuators A 153 2009 191
36. 85/GaP heterojunctions prepared by liquid phase epitaxy Sensors and Actuators A 150 2009 231
37. F. Yakuphanolu Analysis of interface states of metal-insulator- semiconductor photodiode with n-type silicon by conductance technique Sensors and Actuators A 147 2008 104
38. J.H. Werner, and H.H. Güttler Barrier inhomogeneities at Schottky contacts Journal of Applied Physics 69 1991 1522
39. R.T. Tung Electron transport at metal-semiconductor interfaces: general theory Physical Review B 45 1992 13509
40. . Karata,. Altindal, A. Türüt, and A. Özmen Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts Applied Surface Science 217 2003 250
41. J. Osvald Numerical study of electrical transport in inhomogeneous Schottky diodes Journal of Applied Physics 85 1999 1935
42. S.K. Cheung, and N.W. Cheung Extraction of Schottky diode parameters from forward current-voltage characteristics Applied Physics Letters 49 1986 85
43. K.E. Bohlin Generalized Norde plot including determination of the ideality factor Journal of Applied Physics 60 1986 1223
44. E. Arslan,. Altindal, S. Özelik, and E. Özbay Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures Semiconductor Science and Technology 24 2009 075003
45. P. Chattopadhyay, and A.N. Daw On the current transport mechanism in a metal-insulator-semiconductor (MIS) diode Solid-State Electronics 29 1986 555
46. F.A. Padovani, and R. Stratton Field and thermionic-field emission in Schottky barriers Solid-State Electronics 9 1966 695
47. Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflere, and F. Cardon On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers Solid-State Electronics 29 1986 633
48. H.H. Guttler, and J.H. Werner Influence of barrier inhomogeneities on noise at Schottky contacts Applied Physics Letters 56 1990 1113
49. E. Dobrocka, and J. Osvald Influence of barrier height distribution on the parameters of Schottky diodes Applied Physics Letters 65 1994 575
50. 2Si/Si Schottky diodes Journal of Applied Physics 80 1996 288
51. S. Chand An accurate approach for analysing an inhomogeneous Schottky diode with a Gaussian distribution of barrier heights Semiconductor Science and Technology 17 2002 L36C
52. A. Gumus, A. Turut, and N. Yalcin Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs Journal of Applied Physics 91 2002 245 (Pubitemid 34047264)
53. 2 Schottky contacts on n-Si (1 0 0) and (1 1 1) Solid-State Electronics 44 2000 663
54. S. Zhu, R.L. Van Meirhaeghe, C. Detavernier, G.P. Ru, B.Z. Li, and F. Cardon A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes Solid State Communications 112 1999 611
55. A. Tatarolu, and. Altindal The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics Journal of Alloys and Compounds 484 2009 405
56. M. Soylu, and F. Yakuphanoglu Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model Journal of Alloys and Compounds 506 2010 418
57. 2 by the selenization of sputtered Cu/In layers Journal of Materials Science 32 1997 1889
58. K. inar, N. Yildirim, C. Cokun, and A. Türüt Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes Journal of Applied Physics 106 2009 073717
59. T. Tunc,. Altindal,. Uslu,. Dökme, and H. Uslu Temperature dependent current-voltage (I-V) characteristics of Au/n-Si(1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer Materials Science in Semiconductor Processing 14 2011 139
60. M. Salam, M. Biber, A. Türüt, M.S. Arta, and M. akar Determination of the characteristic parameters of polyaniline/p-type Si/AI structures from current-voltage measurements International Journal of Polymeric Materials 54 2005 805
61. M.K. Hudait, and S.B. Krupanidhi Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates Materials Science and Engineering B 87 2001 141
62. H.C. Card, and E.H. Rhoderick Studies of tunnel MOS diodes. I. Interface effects in silicon Schottky diodes Journal of Physics D: Applied Physics 4 1971 1589
63. 2/Si Schottky structures in a wide temperature range" Solid-State Electronics 39 1996 176