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Physica B: Condensed Matter

Volumn 307, Issue 1-4, 2001, Pages 125-137

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

(2) Hudait, M K a,b,c Krupanidhi, S B a

a INDIAN INSTITUTE OF SCIENCE (India)

b BHARAT ELECTRONICS LIMITED (India)

c Ohio State University (United States)

Author keywords

Electrical measurements; Gallium arsenide; Metal organic vapor phase epitaxy; Schottky barrier

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; GOLD COMPOUNDS; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMIONIC EMISSION;

BARRIER HEIGHTS;

SCHOTTKY BARRIER DIODES;

EID: 0035577360 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00631-7 Document Type: Article

Times cited : (123)

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