Transport behaviors in graphene field effect transistors on boron nitride substrate

2012 15th International Workshop on Computational Electronics, IWCE 2012

Volumn , Issue , 2012, Pages

  Alarcon A ^a   Nguyen, V Hung ^a   Berrada, S ^a   Querlioz, D ^a   Saint Martin, J ^a   Bournel, A ^a   Dollfus, P ^a  

^a CNRS   (France)

Author keywords

boron nitride; Dirac point; Graphene field effect transistor; non equilibrium Green's functions; short channel effect

Indexed keywords

BAND TO BAND TUNNELING; CURRENT OSCILLATION; DIRAC POINT; GATE INSULATOR; GATE LENGTH; NEGATIVE DIFFERENTIAL CONDUCTANCE; NON-EQUILIBRIUM GREEN'S FUNCTION; POISSON'S EQUATION; SHORT-CHANNEL EFFECT; SIMULATION MODEL; TIGHT-BINDING HAMILTONIANS; TRANSFER CHARACTERISTICS; TRANSPORT BEHAVIOR;

BORON NITRIDE; COMPUTER SIMULATION; ELECTRONICS ENGINEERING; FIELD EFFECT TRANSISTORS; GREEN'S FUNCTION; HAMILTONIANS; IONIC CONDUCTION; POISSON EQUATION;

GRAPHENE;

EID: 84866559270     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2012.6242820     Document Type: Conference Paper

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