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Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions

(3) Hung Nguyen, V a,b Bournel, A a Dollfus, P a

a UNIVERSITÉ PARIS SACLAY (France)

b INSTITUTE OF PHYSICS (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP OPENINGS; BARRIER HEIGHTS; DEVICE PARAMETERS; GRAPHENE PLANE; INTERBAND TUNNELING; INVERSION SYMMETRY; NONEQUILIBRIUM GREEN'S FUNCTION TECHNIQUE; P-N JUNCTION; PEAK-TO-VALLEY RATIOS; ROOM TEMPERATURE; TRANSITION LENGTH; TRANSPORT CHARACTERISTICS;

GREEN'S FUNCTION; LANDFORMS; MONOLAYERS; SEMICONDUCTOR JUNCTIONS;

GRAPHENE;

EID: 79959500346 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3587570 Document Type: Article

Times cited : (22)

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