Resonant tunneling through double barrier graphene systems: A comparative study of Klein and non-Klein tunneling structures

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Rodriguez Vargas I ^a   Madrigal Melchor, J ^a   Oubram, O ^b  

^a UNIVERSIDAD AUTÓNOMA DE ZACATECAS   (Mexico)

^b INSTITUTO DE INVESTIGACIONES EN MATERIALES   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC CHARACTERISTIC; BOUND STATE; COMPARATIVE STUDIES; DOUBLE BARRIERS; ELECTRON ENERGIES; ELECTROSTATIC PROBE; ENERGY BANDGAPS; GRAPHENE LAYERS; GRAPHENE SHEETS; GROWTH TECHNIQUES; INCIDENT ANGLES; INCIDENT ELECTRONS; OSCILLATORY BEHAVIORS; SUBBANDS; TRANSFER MATRIX APPROACH; TRANSMISSION PROPERTY; TUNNELING EFFECTS; TUNNELING STRUCTURE; WELL WIDTH;

ELECTRONIC STRUCTURE; ELECTROSTATICS; ENERGY GAP; EPITAXIAL GROWTH; GRAPHENE; RESONANT TUNNELING; SILICON CARBIDE; SUBSTRATES; TRANSFER MATRIX METHOD;

STRUCTURES (BUILT OBJECTS);

EID: 84867570160     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757591     Document Type: Article

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