SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 20, 2012, Pages

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

(7) Cao, M G a Chen, Y S a Sun, J R a Shang, D S a Liu, L F b Kang, J F b Shen, B G a

a INSTITUTE OF PHYSICS (China)

b PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT TRANSITION; BIPOLAR DEVICE; DISSIPATION EFFECTS; DYNAMIC PROCESS; LOCAL SWITCHING; NONLINEAR DEPENDENCE; PULSE VOLTAGE; RESISTANCE CHANGE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SET TIME; TRANSIENT CHARACTERISTIC;

PHYSICAL PROPERTIES; PHYSICS;

PLATINUM;

EID: 84870023501 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4766737 Document Type: Article

Times cited : (38)

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