Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles

Journal of Micromechanics and Microengineering

Volumn 23, Issue 1, 2013, Pages

  Yoon, Sang Won ^a   Glover, Michael D ^b   Mantooth, H Alan ^b   Shiozaki, Koji ^a  

^a Toyota Motor North America Inc   (United States)

^b University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BONDED COPPERS; ELECTRIFIED VEHICLES; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; MATERIAL IDENTIFICATION; PROCESS TEMPERATURE; SCANNING ACOUSTIC MICROSCOPES; THERMAL AND ELECTRICAL CONDUCTIVITY; TRANSIENT LIQUID PHASE;

AUTOMOBILE MANUFACTURE; COPPER; COPPER ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRIC POWER SYSTEMS; ENERGY DISPERSIVE SPECTROSCOPY; FABRICATION; HIGH TEMPERATURE OPERATIONS; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; TIN; VEHICLES;

TIN ALLOYS;

EID: 84878147155     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/23/1/015017     Document Type: Article

References (35)

1. Toyota Motor Corporation 2012 Toyota Motor Corporation Worldwide Sales of TMC Hybrids Top 4 Million Units (Toyota News, 22 May) http://www2.toyota.co.jp/ en/news/12/05/0522.html
2. Kanata T, Nishiwaki K and Hamada K 2010 Development trends of power semiconductors for hybrid vehicles Proc. Int. Power Electronics Conf. (Sapporo, Japan,) pp 778-82
3. Funaki T et al 2007 Power conversion with SiC devices at extremely high ambient temperatures IEEE Trans. Power Electron. 22 1321-9 (Pubitemid 47098833)
4. Funaki T et al 2005 Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters IEICE Electron. Express 2 97-102
5. Ramsay E et al 2012 Digital and analogue integrated circuits in silicon carbide for high temperature applications Proc. Int. Conf. on High Temperature Electronics pp 373-7
6. Lu H, Bailey C and Yin C 2009 Design for reliability of power electronics modules Microelectron. Reliab. 49 1250-5
7. Charboneau B C et al 2008 Double-sided liquid cooling for power semiconductor devices using embedded power packaging IEEE Trans. Ind. Appl. 44 1644-55
8. Gillot C, Schaeffer C, Massit C and Meysenc L 2001 Double-sided cooling for high power IGBT modules using flip chip technology IEEE Trans. Compon. Packag. Technol. 24 698-704 (Pubitemid 34091944)
9. Ozmat B, Korman C S, McConnelee P, Kheraluwala M, Delgado E and Pillion R 2000 A new power module packaging technology for enhanced thermal performance Proc. Intersociety Conf. on Thermal Phenomena (Las Vegas, NV,) pp 287-96
10. Johnson C M et al 2007 Compact double-side liquid-impingement-cooled integrated power electronic module Proc. Int. Symp. on Power Semiconductor Devices and ICs (Jeju, Korea,) pp 53-6 (Pubitemid 351306485)
11. Ning P, Lei T G, Wang F, Lu G-Q, Ngo K D T and Rajashekara K 2010 A novel high-temperature planar package for SiC multichip phase-leg power module IEEE Trans. Power Electron. 25 2059-67
12. Vagnon E, Jeannin P-O, Crebier J-C and Avenas Y 2010 A bus-bar-like power module based on three-dimensional power-chip-on-chip hybrid integration IEEE Trans. Ind. Appl. 46 2046-55
13. Yoon S W, Glover M D, Mantooth H A and Shiozaki K 2012 Highly reliable double-sided bonding used in double-sided cooling for high temperature power electronics Proc. IMAPS High Temperature Electronics Conf. (Albuquerque, NM,) pp 45-50
14. Lee N-C 2000 Lead-free soldering and low alpha solders for wafer level interconnects Proc. Int. Symp. on Microelectronics (Boston, MA,) pp 541-50
15. Liu W, Bachorik P and Lee N-C 2012 A composite solder alloy preform for high temperature Pb-free soldering applications Proc. Int. Brazing and Soldering Conf. (Las Vegas, NV,) pp 188-95
16. Zhang H W 2012 A drop-in die-attach solution for the high temperature lead-free BiAgX solder paste system Proc. Int. Conf. on High Temperature Electronics (Albuquerque, NM,) pp 58-65
17. Ma H and Suhling J C 2009 A review of mechanical properties of lead-free solders for electronic packaging J. Mater. Sci. 44 1141-58
18. Yoon S W, Lee S, Perkins N C and Najafi K 2011 Analysis and wafer-level design of a high-order silicon vibration isolator for resonating MEMS devices J. Micromech. Microeng. 21 015017
19. Xiao K, Calata J, Zheng H, Ngo K and Lu G-Q 2012 Improved process for high temperature large-area sintered nanosilver device attachment Proc. Int. Conf. on High Temperature Electronics (Albuquerque, NM,) pp 129-34
20. Yoon S W, Shiozaki K, Yasuda S and Glover M D 2012 Highly reliable nickel-tin transient liquid phase bonding technology for high temperature operational power electronics in electrified vehicles Proc. Applied Power Electronics Conf. and Exposition (Orlando, FL,) pp 478-82
21. Ueda T, Yoshimatsu N, Kimoto N, Nakajima D, Kikuchi M and Shinohara T 2010 Simple, compact, robust and high-performance power module T-PM (transfer-molded power module) Proc. Int. Symp. on Power Semiconductor Devices and ICs (Hiroshima, Japan,) pp 47-50
22. Guth K et al 2010 New assembly and interconnects beyond sintering methods Proc. Power Conversion Intelligent Motion (Nuremberg, Germany,) pp 232-7
23. Mustain H A, Brown W D and Ang S S 2010 Transient liquid phase die attach for high-temperature silicon carbide power devices IEEE Trans. Compon. Packag. Technol. 33 563-70
24. Quintero P and McCluskey F P 2009 Silver-indium transient liquid phase sintering for high temperature die attachment J. Microelectron. Electron. Packag. 6 66-74
25. Rowden B, Mantooth A, Ang S, Lostetter A, Hornberger J and McPherson B 2009 High temperature SiC power module packaging Proc. ASME Int. Mechanical Engineering Congr. and Exposition (Lake Buena Vista, FL,) pp 85-90
26. Kang J S, Gagliano R A, Ghosh G and Fine M E 2002 Isothermal solidification of Cu/Sn diffusion couples to form thin-solder joints J. Electron. Mater. 31 1238-43
27. Frederikse H P F, Fields R J and Feldman A 1992 Thermal and electrical properties of copper-tin and nickel-tin intermetallics J. Appl. Phys. 72 2879-82
28. Yamada Y et al 2009 Pb-free high temperature solder joints for power semiconductor devices Trans. Japan Inst. Electron. Packag. 2 79-84
29. Lu B, Chen K, Meng W J and Mei F 2010 Fabrication, assembly and heat transfer testing of low-profile copper-based microchannel heat exchangers J. Micromech. Microeng. 20 115002
30. Kuhne S and Hierold C 2011 Wafer-level packaging and direct interconnection technology based on hybrid bonding and through silicon vias J. Micromech. Microeng. 21 085032
31. Laurila T, Vuorinen V and Paulasto-Kröckel M 2012 Interfacial Compatibility in Microelectronics (Berlin: Springer)
32. Schulz-Harder J 2003 Advantages and new development of direct bonded copper substrates Microelectron. Reliab. 43 359-65
33. Bader S, Gust W and Hieber H 1995 Rapid formation of intermetallic compounds interdiffusion in the Cu-Sn and Ni-Sn systems Acta Metall. Mater. 43 329-37
34. Phase Diagrams and Computational Thermodynamics Metallurgy Division, The National Institute Of Standards And Technology (NIST) http://www.metallurgy. nist.gov/phase/solder/cusn.html
35. Cree Z-FET SiC MOSFET http://www.cree.com/power/products/z-fet-sic-mosfet