Simple, compact, robust and high-performance power module T-PM (Transfer-molded Power Module)

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2010, Pages 47-50

  Ueda, Tetsuya ^a   Yoshimatsu, Naoki ^b   Kimoto, Nobuyoshi ^b   Nakajima, Dai ^a   Kikuchi, Masao ^a   Shinohara, Toshiaki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Fukuryo Semicon Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SURFACES; CURRENT DISTRIBUTION; NUMERICAL SIMULATION; POWER CYCLING; POWER MODULE; TEMPERATURE SWINGS; THERMAL CONDUCTANCE;

COMPUTER SIMULATION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR SWITCHES;

EID: 77956594129     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T.Sasaki, et al., "Development of High Current Transfer-molded type Power Module with High Heat-cycle Durability".IEEE-ISPSD, 2004 Proceedings, pp .293-296.
2. S.Sudo, et al., "Wire-bonding-less Interconnection Technique for high current power modules" IMAPS 2004.
3. T.Ueda, et al., "New Package Technology development for Power Devices" IEEE/IAS 2005.
4. A.Narazaki, et al., "Direct Beam Lead Bonding for Trench MOSFET & CSTBT" pp.75-78, ISPSD 2005.
5. T.Nishiyama, et al.. "The IGBT Module with 6th Generation IGBT" Proceedings PCIM 2009, pp.125-129.