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Volumn , Issue , 2010, Pages 778-782

Development trends of power semiconductors for hybrid vehicles

Author keywords

Cooling efficiency; Fuel cell hybrid vehicle; Hybrid vehicle; Plug in hybrid vehicle; Power control unit; Power density; Power semiconductor; SiC

Indexed keywords

COOLING EFFICIENCY; FUEL CELL HYBRID VEHICLES; HYBRID VEHICLES; PLUG-IN HYBRID VEHICLE; POWER CONTROL UNIT; POWER DENSITIES; POWER SEMICONDUCTORS; SIC;

EID: 77956525581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5543294     Document Type: Conference Paper
Times cited : (35)

References (10)
  • 1
    • 77956504552 scopus 로고    scopus 로고
    • Development of power control unit for compact-class vehicle
    • No.2009-01-1310
    • N. Nozawa et al., "Development of Power Control Unit for Compact-class Vehicle", No.2009-01-1310, SAE World Congress, 2009
    • (2009) SAE World Congress
    • Nozawa, N.1
  • 2
    • 77956552534 scopus 로고    scopus 로고
    • Development of small size power control unit
    • R. Hironaka, H. Kusafuka, "Development of small size Power Control Unit", Proc of EVS-22,2006
    • (2006) Proc of EVS-22
    • Hironaka, R.1    Kusafuka, H.2
  • 3
    • 77956527699 scopus 로고    scopus 로고
    • Development of power control unit for hybrid vehicle
    • W. Funatsu et al., "Development of Power Control Unit for Hybrid Vehicle", Toyota Technical Review Vol.56 No.1 (2008) pp40-47
    • (2008) Toyota Technical Review , vol.56 , Issue.1 , pp. 40-47
    • Funatsu, W.1
  • 6
    • 77956520827 scopus 로고    scopus 로고
    • Advanced wide cell pitch CSTBTs having LPT structure
    • K. Nakamura et al., "Advanced Wide Cell Pitch CSTBTs Having LPT Structure", Proc of ISPSD'02 (9.1), 2002
    • (2002) Proc of ISPSD'02 , Issue.91
    • Nakamura, K.1
  • 7
    • 39749094406 scopus 로고    scopus 로고
    • Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss
    • Y. Onozawa, H. Nakano, M. Otsuki, K. Yoshikawa, T. Miyasaka, Y. Seki, "Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss", Proc. of ISPSD'07.pp.13-16, 2007
    • (2007) Proc. of ISPSD'07 , pp. 13-16
    • Onozawa, Y.1    Nakano, H.2    Otsuki, M.3    Yoshikawa, K.4    Miyasaka, T.5    Seki, Y.6
  • 8
    • 51549089983 scopus 로고    scopus 로고
    • Critical IGBT design regarding EMI and switching losses
    • M. Tsukuda et al., "Critical IGBT Design Regarding EMI and Switching Losses", Proc of ISPSD'08.pp.185-188, 2008
    • (2008) Proc of ISPSD'08 , pp. 185-188
    • Tsukuda, M.1
  • 9
    • 77949951506 scopus 로고    scopus 로고
    • Investigation of correlation between device structure and switching losses of IGBTs
    • S. Machida, T. Sugiyama, S. Yasuda, J. Saito, K. Hamada, "Investigation of Correlation between Device Structure and Switching Losses of IGBTs", Proc of ISPSD'09.pp.136-139, 2009
    • (2009) Proc of ISPSD'09 , pp. 136-139
    • Machida, S.1    Sugiyama, T.2    Yasuda, S.3    Saito, J.4    Hamada, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.