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Journal of Alloys and Compounds

Volumn 577, Issue , 2013, Pages 30-36

Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

(5) Yuksel, O F a Tugluoglu N b Gulveren, B a Safak H a Kus M a

a SELCUK UNIVERSITY (Turkey)

b Saraykoy Nuclear Research and Training Center (Turkey)

Author keywords

Electronic materials; Organic compounds; Schottky diode; Semiconductors; Thin films

Indexed keywords

DIODES; ELECTRIC RESISTANCE; ELECTRONIC PROPERTIES; FILMS; INTERFACE STATES; ORGANIC COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION; THIN FILMS;

ELECTRONIC MATERIALS; GENERATION-RECOMBINATION PROCESS; INCREASING TEMPERATURES; INTERFACE CHARACTERISTIC; POSSIBLE MECHANISMS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENCE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84878007298 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2013.04.157 Document Type: Article

Times cited : (45)

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