Dependency of barrier height and ideality factor on identically produced small Au/p-Si Schottky barrier diodes

Physica B: Condensed Matter

Volumn 405, Issue 16, 2010, Pages 3253-3258

  Yeganeh, M A ^a,c   Rahmatollahpur, Sh ^b,c   Sadighi Bonabi, R ^b   Mamedov, R ^a  

^a BAKU STATE UNIVERSITY   (Azerbaijan)

^b SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^c Material School   (Iran)

Author keywords

Barrier height; Conducting probe atomic force microscope; Ideality factor; Schottky barrier diodes

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; BARRIER HEIGHTS; BUILT-IN POTENTIAL; CONDUCTING PROBES; CURRENT VOLTAGE; HIGH QUALITY; IDEALITY FACTORS; METAL SEMICONDUCTORS; NONLINEAR DEPENDENCIES; REVERSE LEAKAGE CURRENT; SCIENTIFIC EVIDENCE;

ATOMIC FORCE MICROSCOPY; ATOMS; MICROSCOPES; PROBES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SEMICONDUCTOR DIODES;

EID: 77955303390     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.04.055     Document Type: Article

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