Temperature-dependent barrier characteristics of Ag/p-SnSe Schottky diodes based on I-V-T measurements

Semiconductor Science and Technology

Volumn 19, Issue 9, 2004, Pages 1092-1097

  Tugluoglu N ^a   Karadeniz, S ^a   Sahin M ^b   Safak H ^b  

^a Ankara Nuclear Research and Training Center   (Turkey)

^b SELCUK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONIC PROPERTIES; ENERGY GAP; LATTICE CONSTANTS; OPTOELECTRONIC DEVICES; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; THERMAL EFFECTS; THERMIONIC EMISSION; VAN DER WAALS FORCES;

INTERFACIAL OXIDE LAYERS; LEAD SALTS MATERIALS; MEMORY-SWITCHING DEVICES; ORTHOMBIC STRUCTURES;

SCHOTTKY BARRIER DIODES;

EID: 4544236298     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/9/004     Document Type: Article

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