Temperature dependence of current-voltage characteristics of Ag/p-SnSe Schottky diodes

Applied Surface Science

Volumn 233, Issue 1-4, 2004, Pages 320-327

  Tugluoglu N ^a   Karadeniz, S ^a   Sahin M ^b   Safak H ^b  

^a Ankara Nuclear Research and Training Center   (Turkey)

^b SELCUK UNIVERSITY   (Turkey)

Author keywords

I V characteristics; IV VI layered semiconductor compounds; Schottky barrier diode

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; CARRIER CONCENTRATION; CLEANING; CRYSTALLOGRAPHY; DEPOSITION; ELECTRIC PROPERTIES; ELECTROMETERS; EVAPORATION; POLISHING; SEMICONDUCTING SILVER COMPOUNDS; SOLAR ENERGY; THERMIONIC EMISSION;

I-V CHARACTERISTICS; IV-VI LAYERED SEMICONDUCTOR COMPOUNDS; SERIES RESISTANCE VALUE; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 2942527495     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.238     Document Type: Article

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