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Volumn 71, Issue 3, 2010, Pages 351-356
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Electronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device
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Author keywords
A. Electronic materials; A. Interfaces; A. Organic compounds; A. Semiconductors; D. Electrical properties
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Indexed keywords
A. ELECTRONIC MATERIALS;
BARRIER HEIGHTS;
CONGO RED;
ELECTRICAL PROPERTY;
ELECTRONIC MATERIALS;
FORWARD BIAS;
IDEALITY FACTORS;
INORGANIC SEMICONDUCTORS;
INTERFACE STATE DENSITY;
INTERFACIAL POTENTIAL;
IV CHARACTERISTICS;
MIS DIODES;
ORGANIC FILMS;
ORGANIC INTERLAYERS;
ORGANIC MATERIALS;
RECTIFYING BEHAVIORS;
SANDWICH DEVICES;
SCHOTTKY DEVICES;
SEMI-CONDUCTOR WAFER;
SI SCHOTTKY DIODE;
SPACE CHARGE REGIONS;
THIN INTERLAYERS;
AZO DYES;
CHROMATE COATINGS;
DISTILLATION;
ELECTRIC PROPERTIES;
ELECTRONIC PROPERTIES;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR QUANTUM DOTS;
SILICON WAFERS;
SWITCHING CIRCUITS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 76749142148
PISSN: 00223697
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jpcs.2009.12.089 Document Type: Article |
Times cited : (51)
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References (55)
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