Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer

Microelectronic Engineering

Volumn 88, Issue 6, 2011, Pages 867-871

  Aydin, Mehmet Enver ^a   Soylu, Murat ^b   Yakuphanoglu, Fahrettin ^b,c   Farooq, W A ^d  

^a DICLE UNIVERSITY   (Turkey)

^b BINGOL UNIVERSITY   (Turkey)

^c FIRAT UNIVERSITY   (Turkey)

^d KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Hetero junction; Organic semiconductor inorganic semiconductor contacts; Schottky barrier diodes

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE-VOLTAGE METHOD; CURRENT VOLTAGE; ELECTRONIC PARAMETERS; GAAS; IDEALITY FACTORS; INORGANIC SEMICONDUCTORS; INTERFACIAL POTENTIAL; METAL-ORGANIC; ORGANIC FILMS; ORGANIC INTERLAYERS; RECTIFICATION BEHAVIOR; SCHOTTKY DIODES; SEMICONDUCTOR CONTACTS; SPACE CHARGE REGIONS; THIN INTERLAYERS;

ELECTRONIC PROPERTIES; ETHYLENE; ETHYLENE GLYCOL; GALLIUM ALLOYS; GALLIUM ARSENIDE; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

SCHOTTKY BARRIER DIODES;

EID: 79952438701     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.11.012     Document Type: Article

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