Admittance and subthreshold characteristics of atomic-layer-deposition Al 2O 3 on In 0.53Ga 0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Paterson, G W ^a   Bentley, S J ^a   Holland, M C ^a   Thayne, I G ^a   Ahn, J ^b   Long, R D ^b   McIntyre, P C ^b   Long, A R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BURIED CHANNELS; DEFECT STATE; FLAT BAND; GATE VOLTAGES; HYDROXYL ION; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; OXIDE TRAP DENSITY; OXIDE TRAPS; SIMPLE METHOD; SOURCE-DRAIN VOLTAGE; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SWING; TRANSISTOR DESIGNS;

ELECTRIC CURRENTS; GADOLINIUM; HAFNIUM OXIDES; HYDROGEN; INTERFACE STATES; MOSFET DEVICES;

ALUMINUM;

EID: 84862133271     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4720940     Document Type: Conference Paper

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