Growth behavior of GaSb by metal-organic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 296, Issue 2, 2006, Pages 117-128

  Rathi, Manish K ^a   Hawkins, Brian E ^a   Kuech, Thomas F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

A1. Adsorption; A1. Computer simulation; A1. Desorption; A1. Growth Models; A3. Metal organic vapor phase epitaxy; B1. Antimonides

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; DESORPTION; EPITAXIAL GROWTH; MASS TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; NUMERICAL ANALYSIS; SURFACE CHEMISTRY; SURFACE REACTIONS;

ANTIMONIDES; GROWTH MODELS; GROWTH RATE; MONOMETHYL ANTIMONY (MMSB);

GALLIUM COMPOUNDS;

EID: 33750502608     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.025     Document Type: Article

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