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Volumn 24, Issue 18, 2013, Pages

Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering

(14) Reparaz, J S a,b Peica, N a Kirste, R a Goni A R b,c Wagner, M R a Callsen, G a Alonso, M I b Garriga, M b Marcus, I C b Ronda, A d Berbezier, I d Maultzsch, J a Thomsen, C a Hoffmann, A a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b CSIC (Spain)

c INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA (Spain)

d AIX MARSEILLE UNIVERSITY (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; CRYSTALLOGRAPHIC DIRECTIONS; GE DISTRIBUTION; LOCAL STRAINS; MICRO-RAMAN SCATTERING; SELF-ASSEMBLED; SINGLE WIRES; TIP-ENHANCED RAMAN SCATTERINGS;

MOLECULAR BEAM EPITAXY; NANOWIRES; RAMAN SCATTERING; WIRE;

GERMANIUM;

EID: 84876479987 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/24/18/185704 Document Type: Article

Times cited : (22)

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