Realization of a linear germanium nanowire p-n junction

Nano Letters

Volumn 6, Issue 9, 2006, Pages 2070-2074

  Tutuc, Emanuel ^a   Appenzeller, Joerg ^a   Reuter, Mark C ^a   Guha, Supratik ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING MODULATION; NANOWIRES;

CHEMICAL VAPOR DEPOSITION; GERMANIUM; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DOPING;

SEMICONDUCTOR JUNCTIONS;

GERMANIUM; NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; METHODOLOGY; MICROELECTRODE; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; MICROELECTRODES; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS;

EID: 33749673628     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl061338f     Document Type: Article

References (22)

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11. 8 A measurement of the shell thickness on our nanowires is a difficult task and beyond the scope of this study. We note however that a marker Si substrate without Au catalyst placed in the vicinity of the nanowire substrate showed a 15 nm planar growth during the growth of the B-doped shell. It is unclear if the conformal growth on the nanowires resulted in exactly the same thickness.
12. -3.
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14. 2, where C is the wire-gate capacitance and L is the channel length. The capacitance values we used in order to extract the mobilities were numerically calculated for our device geometry.
15. The spatial extent of the first, "gated" portion of the wire depends on the doping level. For a higher doping level, the gated portion will have a smaller thickness and vice versa.
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18. gs data were multiplied by a factor 5 in Figure 3a for a meaningful comparison with the other traces.
19. ds.
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21. We have further verified this explanation by varying the thickness of the B-doped Ge shell. For example, if we double the shell growth time its thickness will be sufficiently large so that the whole wire will have p-type character.
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