Influence of alloy inhomogeneities on the determination by Raman scattering of composition and strain in Si 1-xGe x/Si(001) layers

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

  Reparaz, J S ^a   Marcus, I C ^a   Goni A R ^a,b   Garriga, M ^a   Alonso, M I ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; ALLOY LAYERS; AS-GROWN; COMPOSITION DEPENDENCE; COMPOSITIONAL DISORDER; COMPOSITIONAL INHOMOGENEITY; COMPOSITIONAL RANGE; GE ATOM; GE CONTENT; GRAPHICAL SOLUTION; INHOMOGENEITIES; OPTICAL PHONON FREQUENCIES; RAMAN DATA; RAMAN MEASUREMENTS; RESIDUAL STRAINS; SEQUENTIAL ANNEALING; SIGE LAYERS; STRAIN-RELAXED; STRAINED-SI; UPPER BOUND; VIBRATIONAL MODES; VIBRATIONAL PROPERTIES; X RAY MEASUREMENTS;

ALLOYING; RAMAN SCATTERING; SILICON; SILICON ALLOYS;

GERMANIUM;

EID: 84865464875     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737486     Document Type: Article

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