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Volumn 13, Issue 4, 2013, Pages 1675-1680

Atomically abrupt silicon-germanium axial heterostructure nanowires synthesized in a solvent vapor growth system

Author keywords

aberration corrected STEM analysis; germanium; Heterostructure nanowires; interfacial abruptness; silicon; solvent vapor growth

Indexed keywords

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; ABERRATION-CORRECTED STEM; CRYSTALLOGRAPHIC DEFECTS; INTERFACIAL ABRUPTNESS; SI AND GE NANOWIRES; SILICON GERMANIUM; SOLVENT VAPORS; WET-CHEMICAL APPROACH;

EID: 84876041710     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400146u     Document Type: Article
Times cited : (62)

References (58)
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    • Cui, Y.1    Lieber, C.M.2
  • 20
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    • 67649165802 scopus 로고    scopus 로고
    • Yu, L. Nanotechnol. 2009, 20 (22) 225604
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    • Yu, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.