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Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

Axial bandgap engineering in germanium-silicon heterostructured nanowires

(3) Dayeh, Shadi A a Dickerson, Robert M a Picraux, S Thomas a

a LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL DIRECTION; BAND GAP ENGINEERING; CHARGE TRANSPORT IN SEMICONDUCTORS; COMPOSITION CHANGES; COMPOSITIONAL CHANGES; DEGREE OF FREEDOM; HIGH CARRIER INJECTION; ON-CURRENTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SEMICONDUCTOR NANOWIRE; TRANSFER CHARACTERISTICS; TRANSPORT DIRECTION;

ELECTRIC FIELDS; ENERGY GAP; FIELD EFFECT TRANSISTORS; GERMANIUM; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053196878 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3634050 Document Type: Article

Times cited : (21)

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